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Enhancement of current carrying capacity of the strained ZnSe nanowire

机译：应变ZnSe纳米线载流能力的增强

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摘要

The effect of strain on the current carrying capacity of ZnSe nanowire has been studied by in situ transmission electron microscopy (TEM). Under TEM inspection the strain can be created at the selected position in a single ZnSe nanowire by the compressive stress applied along its axial direction using a movable probe electrode. The induced strain is controllable in the magnitude of curvature of the ZnSe nanowire bent by careful manipulation of the movable probe electrode. In situ current-induced Joule heating has confirmed that the strained segment in a single ZnSe nanowire exhibited better ability than the unstrained segments against Joule heating. Consequently, the current carrying capacity of the ZnSe nanowire can be effectively enhanced by intentionally created strain. The experimental results have also proved that a significant increase of the electrical conductance and the thermal resistance can be achieved simultaneously in a single nanowire by the intentionally designed and created strain.
机译：通过原位透射电子显微镜（TEM）研究了应变对ZnSe纳米线载流能力的影响。在TEM检查下，可以通过使用可移动探针电极沿其轴向施加的压缩应力在单个ZnSe纳米线上的选定位置处产生应变。通过仔细操纵可移动探针电极，可以控制弯曲的ZnSe纳米线的曲率大小所引起的应变。原位电流诱导的焦耳加热已证实，单条ZnSe纳米线中的应变段比未应变的段具有更好的抵抗焦耳加热的能力。因此，通过有意产生的应变可以有效地提高ZnSe纳米线的载流能力。实验结果还证明，通过有意设计和产生的应变，可以在单个纳米线中同时实现电导率和热阻的显着提高。

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  • 来源
    《Journal of Applied Physics》 |2011年第10期|p.785-793|共9页
  • 作者

    Y. G. Wang; Y. P. Zeng; B. H. Qu; Q. L. Zhang;

  • 作者单位

    State Key Laboratory for Chemo/Biosensing and Chemometrics and Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, Hunan University, Changsha, 410082, China,Beijing Laboratory of Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences,P.O'.'Box 603, Beijing 100190, China;

    State Key Laboratory for Chemo/Biosensing and Chemometrics and Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, Hunan University, Changsha, 410082, China;

    State Key Laboratory for Chemo/Biosensing and Chemometrics and Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, Hunan University, Changsha, 410082, China;

    State Key Laboratory for Chemo/Biosensing and Chemometrics and Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, Hunan University, Changsha, 410082, China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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