An initial phase of Ge hut array formation at low temperature on Si(001)

Larisa V. Arapkina; Vladimir A. Yuryev

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An initial phase of Ge hut array formation at low temperature on Si(001)

机译：Si（001）上低温形成Ge hut阵列的初始阶段

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We report a direct STM observation of Ge hut array nucleation on the Si(OOl) surface during ultrahigh vacuum molecular-beam epitaxy at 360 °C. Nuclei of pyramids and wedges have been observed on the wetting layer M × N patches starting from the coverage of about 5.1 Å (～3.6 ML). Further development of hut arrays consists of simultaneous growth of the formerly appeared clusters and nucleation of new ones resulting in gradual rise of hut number density with increasing surface coverage. Huts nucleate reconstructing the patch surface from the usual c(4 × 2) or p2 × 2) structure to one of two recently described formations composed by epitaxially oriented Ge dimer pairs and chains of four dimers.

机译：我们报告了在360°C超高真空分子束外延过程中Si（OOl）表面Ge小屋阵列成核的直接STM观察。在润湿层M×N斑块上观察到金字塔和楔形核，覆盖范围约为5.1Å（〜3.6 ML）。小屋阵列的进一步发展包括同时出现的簇的生长和新簇的成核，从而导致小屋数目密度随着表面覆盖率的增加而逐渐增加。小屋形核将补丁表面从通常的c（4×2）或p2×2）结构重建为最近描述的两个外延结构之一，该结构由外延取向的Ge二聚体对和四个二聚体的链组成。

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来源
《Journal of Applied Physics》 |2011年第10期|p.845-848|共4页
作者
Larisa V. Arapkina; Vladimir A. Yuryev;
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作者单位

A. M. Prokhorov General Physics Institute of the Russian Academy of Sciences, 38 Vavilov Street,Moscow, 119991, Russia;

A. M. Prokhorov General Physics Institute of the Russian Academy of Sciences, 38 Vavilov Street,Moscow, 119991, Russia;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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正文语种 eng
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An initial phase of Ge hut array formation at low temperature on Si(001)

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