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首页> 外文期刊>Journal of Applied Physics >Experimental and theoretical study of polarization-dependent optical transitions in InAs quantum dots at telecommunication-wavelengths(1300-1500 nm)
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Experimental and theoretical study of polarization-dependent optical transitions in InAs quantum dots at telecommunication-wavelengths(1300-1500 nm)

机译：InAs量子点中电信波长（1300-1500 nm）偏振相关的光跃迁的实验和理论研究

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摘要

The design of some optical devices, such as semiconductor optical amplifiers for telecommunication applications, requires polarization-insensitive optical emission at long wavelengths (1300-1550 nm). Self-assembled InAs/GaAs quantum dots (QDs) typically exhibit ground state optical emissions at wavelengths shorter than 1300 nm with highly polarization-sensitive characteristics, although this can be modified by the use of low growth rates, the incorporation of strain-reducing capping layers, or the growth of closely-stacked QD layers. Exploiting the strain interactions between closely stacked QD layers also affords greater freedom in the choice of growth conditions for the upper layers, so that both a significant extension in their emission wavelength and an improved polarization response can be achieved due to modification of the QD size, strain, and composition. In this paper, we investigate the polarization behavior of single and stacked QD layers using room temperature sub-lasing-threshold electroluminescence and photovoltage measurements, as well as atomistic modeling with the NEMO 3-D simulator. A reduction is observed in the ratio of the transverse electric (TE) to transverse magnetic (TM) optical mode response for a GaAs-capped QD stack as compared to a single QD layer, but when the second layer of the two-layer stack is InGaAs-capped, an increase in the TE/TM ratio is observed, in contrast to recent reports for single QD layers.
机译：一些光学设备的设计，例如用于电信应用的半导体光放大器，需要长波长（1300-1550 nm）的偏振不敏感光发射。自组装的InAs / GaAs量子点（QD）通常在短于1300 nm的波长处显示基态光发射，并具有高度偏振敏感的特性，尽管这可以通过使用低生长速率，结合降低应变的封盖来进行修改层或紧密堆积的QD层的增长。利用紧密堆叠的QD层之间的应变相互作用还为上层的生长条件选择提供了更大的自由度，因此，由于QD尺寸的修改，可以实现其发射波长的显着扩展和偏振响应的改善，应变和组成。在本文中，我们使用室温亚激光阈值电致发光和光电压测量，以及使用NEMO 3-D模拟器进行原子建模，研究了单层和堆叠QD层的极化行为。与单层QD层相比，盖有GaAs的QD堆的横向电（TE）与横向磁（TM）光学模式响应之比有所降低，但是当两层堆的第二层为与最近有关单个QD层的报道相比，在用InGaAs封盖的情况下，观察到TE / TM比有所增加。

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  • 来源
    《Journal of Applied Physics》 |2011年第10期|p.900-907|共8页
  • 作者

    Muhammad Usman; Susannah Heck; Edmund Clarke; Peter Spencer; Hoon Ryu; Ray Murray; Gerhard Klimeck;

  • 作者单位

    Networkfor Computational Nanotechnology, Electrical and Computer Engineering Department,Purdue University, West Lafayette, Indiana 47907, USA,Now at Tyndall National Institute, Lee Maltings Dyke Parade, Cork,Ireland;

    Department of Physics, Imperial College London, Blacken Laboratory, Prince Consort Road,London SW7 2AZ, United Kingdom;

    Department of Physics, Imperial College London, Blacken Laboratory, Prince Consort Road,London SW7 2AZ, United Kingdom,Now at EPSRC National Centre for Ⅲ-Ⅴ Technologies, Centre for Nano-science and Technology, University of Sheffield, North Campus, Broad Lane, Sheffield S3 7HQ, United Kingdom;

    Department of Physics, Imperial College London, Blacken Laboratory, Prince Consort Road,London SW7 2AZ, United Kingdom;

    Networkfor Computational Nanotechnology, Electrical and Computer Engineering Department,Purdue University, West Lafayette, Indiana 47907, USA;

    Department of Physics, Imperial College London, Blacken Laboratory, Prince Consort Road,London SW7 2AZ, United Kingdom;

    Networkfor Computational Nanotechnology, Electrical and Computer Engineering Department,Purdue University, West Lafayette, Indiana 47907, USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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