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首页> 外文期刊>Journal of Applied Physics >Plasmon-induced local photocurrent changes in GaAs photovoltaic cells modified with gold nanospheres: A near-field imaging study
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Plasmon-induced local photocurrent changes in GaAs photovoltaic cells modified with gold nanospheres: A near-field imaging study

机译:等离子诱导的金纳米球修饰的GaAs光伏电池中的局部光电流变化:近场成像研究

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摘要

Modification of photovoltaic devices with metallic nanoparticles is expected to be one of the key methods for development of high performance devices as a future energy source. To clarify the mechanism of photocurrent changes induced by surface plasmon resonances of metal nanoparticles, we measured near-field photocurrent excitation images for a GaAs photodiode modified with gold nanospheres (diameter 100 nm) with a spatial resolution higher than 100 nm. The relationship between the photovoltaic efficiency and the plasmons of the gold nanospheres was investigated through the measurements of incident wavelength and polarization dependence of the near-field photocurrent images. Isolated nanospheres deposited on the GaAs active surface caused local photocurrent suppressions at the plasmon resonance wavelengths. In the case of assemblies (dimers and trimers) of the spheres, a remarkable decrease of photocurrent at the gap site between the spheres was observed. From the results, it turned out that the enhanced optical fields created via the plasmbns on the metal nanostructures do not improve the photovoltaic efficiency and that forward scattering of photons by the gold nanoparticles is considered to be more important than the enhanced field effect at the particles for the GaAs photovoltaic device studied.
机译:用金属纳米粒子对光伏器件进行改性有望成为开发高性能器件作为未来能源的关键方法之一。为了阐明由金属纳米粒子的表面等离子体共振引起的光电流变化的机制,我们测量了用金纳米球(直径100 nm)修饰的GaAs光电二极管的近场光电流激发图像,该空间分辨率高于100 nm。通过测量近场光电流图像的入射波长和偏振相关性,研究了光伏效率与金纳米球的等离激元之间的关系。沉积在GaAs活性表面上的孤立纳米球在等离振子共振波长处引起局部光电流抑制。在球体的组装体(二聚体和三聚体)的情况下,在球体之间的间隙位置观察到光电流显着下降。从结果可以看出,通过等离子在金属纳米结构上产生的增强的光场不会提高光伏效率,并且金纳米颗粒对光子的正向散射比在粒子处增强的场效应更为重要。用于GaAs光伏器件的研究。

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  • 来源
    《Journal of Applied Physics》 |2011年第10期|p.104306.1-104306.7|共7页
  • 作者单位

    Institute for Molecular Science, Myodaiji, Okazaki, Aichi 444-8585, Japan,Present address: The Institute for Solid State Physics, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581, Japan;

    Department of Chemistry and Biochemistry, School of Science and Engineering, Waseda University, Okubo, Shinjuku, Tokyo 169-8555, Japan,PRESTO, Japan Science and Technology Agency, Honcho, Kawaguchi, Saitama 332-0012, Japan;

    Institute for Molecular Science, Myodaiji, Okazaki, Aichi 444-8585, Japan,The Graduate University for Advanced Studies, Myodaiji, Okazaki, Aichi 444-8585, Japan;

    Research Institute for Electronic Science, Hokkaido University, Sapporo, Hokkaido 001-0021, Japan,Graduate School of Engineering, Yokohama National University, 79-5, Tokiwadai, Hodogaya-ku, Yokohama 240-8501, Japan;

    PRESTO, Japan Science and Technology Agency, Honcho, Kawaguchi, Saitama 332-0012, Japan,Research Institute for Electronic Science, Hokkaido University, Sapporo, Hokkaido 001-0021, Japan;

    Research Institute for Electronic Science, Hokkaido University, Sapporo, Hokkaido 001-0021, Japan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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