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首页> 外文期刊>Journal of Applied Physics >Growth of Bi doped cadmium zinc telluride single crystals by Bridgman oscillation method and its structural, optical, and electrical analyses
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Growth of Bi doped cadmium zinc telluride single crystals by Bridgman oscillation method and its structural, optical, and electrical analyses

机译：布里奇曼振荡法生长铋掺杂碲化镉锌单晶及其结构，光学和电学分析

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摘要

The II-VI compound semiconductor cadmium zinc telluride (CZT) is very useful for room temperature radiation detection applications. In the present research, we have successfully grown Bi doped CZT single crystals with two different zinc concentrations (8 and 14 at. %) by the Bridgman oscillation method, in which one experiment has been carried out with a platinum (Pt) tube as the ampoule support. Pt also acts as a cold finger and reduces the growth velocity and enhances crystalline perfection. The grown single crystals have been studied with different analysis methods. The stoichiometry was confirmed by energy dispersive by x-ray and inductively coupled plasma mass spectroscopy analyses and it was found there is no incorporation of impurities in the grown crystal. The presence of Cd and Te vacancies was determined by cathodoluminescence studies. Electrical properties were assessed by I-V analysis and indicated higher resistive value (8.53 × 10~8 Ω cm) for the crystal grown with higher zinc concentration (with Cd excess) compare to the other (3.71 × 10~5 Ω cm).
机译：II-VI化合物半导体碲化镉锌（CZT）对于室温辐射检测应用非常有用。在本研究中，我们已经通过Bridgman振荡方法成功地生长了具有两种不同锌浓度（分别为8和14 at。％）的Bi掺杂的CZT单晶，其中以铂（Pt）管为实验材料。安瓿支持。 Pt还可充当冷手指，并降低生长速度并增强结晶完美度。已经用不同的分析方法研究了生长的单晶。化学计量是通过X射线能量色散和电感耦合等离子体质谱分析确定的，发现在生长的晶体中没有掺入杂质。通过阴极发光研究确定了Cd和Te空位的存在。通过I-V分析评估了电性能，并表明与较高的锌浓度（过量Cd）一起生长的晶体相比，其他晶体（3.71×10〜5Ωcm）的电阻值更高（8.53×10〜8Ωcm）。

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  • 来源
    《Journal of Applied Physics》 |2010年第1期|P.093501.1-093501.4|共4页
  • 作者

    V. Carcelen; P. Hidalgo; J. Rodriguez-Fernandez; E. Dieguez;

  • 作者单位

    Dpto. Fisica de Materiales, Laboratorio de Crecimiento de Cristales, Facultad de Ciencias, Univ. Autdnoma de Madrid, 28049 Cantoblanco, Spain;

    Dpto. Fisica de Materiales, Facultad de Ciencias Fisicas, Univ. Complutense de Madrid, 28040 Madrid, Spain;

    Dpto. Fisica de Materiales, Laboratorio de Crecimiento de Cristales, Facultad de Ciencias, Univ. Autdnoma de Madrid, 28049 Cantoblanco, Spain;

    Dpto. Fisica de Materiales, Laboratorio de Crecimiento de Cristales, Facultad de Ciencias, Univ. Autdnoma de Madrid, 28049 Cantoblanco, Spain;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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