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首页> 外文期刊>Journal of Applied Physics >Theoretical simulations of the effects of the indium content, thickness, and defect density of the i-layer on the performance of p-i-n InGaN single homojunction solar cells
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Theoretical simulations of the effects of the indium content, thickness, and defect density of the i-layer on the performance of p-i-n InGaN single homojunction solar cells

机译：i层的铟含量，厚度和缺陷密度对p-i-n InGaN单同质结太阳能电池性能影响的理论模拟

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摘要

In this study, we conducted numerical simulations with the consideration of microelectronic and photonic structures to determine the feasibility of and to design the device structure for the optimized performance of InGaN p-i-n single homojunction solar cells. Operation mechanisms of InGaN p-i-n single homojunction solar cells were explored through the calculation of the characteristic parameters such as the absorption, collection efficiency (x), open circuit voltage (V_(oc)), short circuit current density (J_(sc)), and fill factor (FF). Simulation results show that the characteristic parameters of InGaN solar cells strongly depend on the indium content, thickness, and defect density of the i-layer. As the indium content in the cell increases, J_(sc) and absorption increase while X, V_(oc), and FF decrease. The combined effects of the absorption, χ, V_(oc), J_(sc), and FF lead to a higher conversion efficiency in the high-indium-content solar cell. A high-quality In_(0.75)Ga_(0.25) N solar cell with a 4 μm i-layer thickness can exhibit as high a conversion efficiency as -23%. In addition, the similar trend of conversion efficiency to that of J_(sc) shows that J_(sc) is a dominant factor to determine the performance of p-i-n InGaN solar cells. Furthermore, compared with the previous simulation results without the consideration of defect density, the lower calculated conversion efficiency verifies that the sample quality has a great effect on the performance of a solar cell and a high-quality InGaN alloy is necessary for the device fabrication. Simulation results help us to better understand the electro-optical characteristics of InGaN solar cells and can be utilized for efficiency enhancement through optimization of the device structure.
机译：在这项研究中，我们进行了数值模拟，同时考虑了微电子和光子结构，以确定InGaN p-i-n单同质结太阳能电池最佳性能的可行性并设计了器件结构。通过计算吸收，收集效率（x），开路电压（V_（oc）），短路电流密度（J_（sc））等特征参数，探索了InGaN pin单同质结太阳能电池的工作机理。和填充因子（FF）。仿真结果表明，InGaN太阳能电池的特性参数在很大程度上取决于i层的铟含量，厚度和缺陷密度。随着电池中铟含量的增加，J_（sc）和吸收率增加，而X，V_（oc）和FF降低。吸收量χ，V_（oc），J_（sc）和FF的组合效应导致高铟含量太阳能电池的转换效率更高。 i层厚度为4μm的高质量In_（0.75）Ga_（0.25）N太阳能电池可显示高达-23％的转换效率。此外，与J_（sc）相似的转换效率趋势表明，J_（sc）是决定p-i-n InGaN太阳能电池性能的主要因素。此外，与先前的不考虑缺陷密度的模拟结果相比，较低的计算转换效率证明样品质量对太阳能电池的性能影响很大，并且高质量的InGaN合金对于器件制造是必需的。仿真结果有助于我们更好地理解InGaN太阳能电池的电光特性，并且可以通过优化器件结构来提高效率。

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  • 来源
    《Journal of Applied Physics》 |2010年第9期|p.093118.1-093118.7|共7页
  • 作者

    Shih-Wei Feng; Chih-Ming Lai; Chien-Hsun Chen; Wen-Ching Sun; Li-Wei Tu;

  • 作者单位

    Department of Applied Physics, National University of Kaohsiung, Taiwan, Republic of China;

    Department of Electronic Engineering, Ming Chuan University, Taoyuan, Taiwan, Republic of China;

    Green Energy and Environment Research Laboratories, Industrial Technology Research Institute, Taiwan, Republic of China;

    Material and Chemical Research Laboratories, Industrial Technology Research Institute, Taiwan, Republic of China;

    Department of Physics and Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Taiwan, Republic of China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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