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首页> 外文期刊>Journal of Applied Physics >Determining The Excess Carrier Lifetime In Crystalline Silicon Thin-films By Photoluminescence Measurements
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Determining The Excess Carrier Lifetime In Crystalline Silicon Thin-films By Photoluminescence Measurements

机译：通过光致发光测量确定晶体硅薄膜中多余的载流子寿命

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摘要

A valuable nondestructive measurement and analysis method for determining individual excess carrier lifetimes in multilayer systems is presented. This is particularly interesting for the characterization of crystalline silicon thin-film samples consisting of an electrically active epitaxial layer on top of a highly doped crystalline substrate. The analysis principle is based on a comparison between a measured photoluminescence intensity ratio and associated simulated radiative recombination ratios for samples with different epitaxial layer thicknesses. It benefits from the fact that for low excess carrier lifetimes within the epitaxial layer the carrier concentration in the said layer is limited by bulk recombination, while for high carrier lifetimes surface and interface recombination is dominating. In order to verify this measurement and analysis principle, results of a set of crystalline silicon thin-film samples with varying epitaxial layer thickness on a highly doped Czochralski substrate are presented.
机译：提出了一种有价值的非破坏性测量和分析方法，用于确定多层系统中单个超载子的寿命。对于由高掺杂晶体衬底顶部的电活性外延层组成的晶体硅薄膜样品的表征，这尤其有趣。该分析原理基于对具有不同外延层厚度的样品的测量的光致发光强度比与相关的模拟辐射复合比之间的比较。这得益于以下事实：对于外延层内的低的过量载流子寿命，所述层中的载流子浓度受到本体复合的限制，而对于高的载流子寿命，表面和界面的复合起主要作用。为了验证这种测量和分析原理，提出了一组在高掺杂的切克劳斯基衬底上具有不同的外延层厚度的晶体硅薄膜样品的结果。

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