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首页> 外文期刊>Journal of Applied Physics >Light emission and enhanced nonlinearity in nanophotonic waveguide circuits by III-V/silicon-on-insulator heterogeneous integration
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Light emission and enhanced nonlinearity in nanophotonic waveguide circuits by III-V/silicon-on-insulator heterogeneous integration

机译：III-V /绝缘体上硅异质集成在纳米光子波导电路中的发光和增强的非线性

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摘要

The heterogeneous integration of a III-V thin film on top of a silicon-on-insulator (SOI) optical waveguide circuit by means of adhesive divinylsiloxane-benzocyclobutene (DVS-BCB) die-to-wafer bonding is demonstrated, thereby achieving light emission and enhanced noniinearity in ultracompact SOI cavities. This approach requires ultrathin DVS-BCB bonding layers to allow the highly confined optical mode to overlap with the bonded III-V film. The transfer of sub-100-nm III-V layers using a 65 nm DVS-BCB bonding layer onto SOI racetrack resonator structures is demonstrated. Spontaneous emission coupled to a SOI bus waveguide, spectrally centered around the resonator resonances, is observed by optically pumping the III-V layer. Strong carrier-induced nonlinearities are observed in the transmission characteristics of the III-V/SOI resonator structure. The all-optical control of an optical signal in these III-V/SOI resonators is demonstrated.
机译：通过粘合剂二乙烯基硅氧烷-苯并环丁烯（DVS-BCB）芯片对晶圆的键合，展示了III-V薄膜在绝缘体上硅（SOI）光波导电路顶部的异质集成，从而实现了发光以及超紧凑SOI腔中增强的非弹性。这种方法需要超薄的DVS-BCB粘合层，以使高度受限的光学模式与粘合的III-V膜重叠。演示了使用65 nm DVS-BCB粘合层将亚100 nm III-V层转移到SOI跑道谐振器结构上的过程。通过光学泵浦III-V层，可以观察到耦合到SOI总线波导的自发发射，其光谱中心位于谐振器谐振周围。在III-V / SOI谐振器结构的传输特性中观察到了很强的载波感应非线性。说明了这些III-V / SOI谐振器中光信号的全光控制。

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