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首页> 外文期刊>Journal of Applied Physics >Crack-free GaAs epitaxy on Si by using midpattemed growth: Application to Si-based wavelength-selective photodetectorCrack-free GaAs epitaxy on Si by using midpatterned growth: Application to Si-based wavelength-selective photodetector
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Crack-free GaAs epitaxy on Si by using midpattemed growth: Application to Si-based wavelength-selective photodetectorCrack-free GaAs epitaxy on Si by using midpatterned growth: Application to Si-based wavelength-selective photodetector

机译：通过中型生长在硅上实现无裂纹的GaAs外延：应用于基于硅的波长选择光电探测器通过中型生长在硅上实现无裂纹的GaAs外延：在基于Si的波长选择光电探测器上

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摘要

A monolithically integrated wavelength-selective photodetector, which consists of an 11.86 μm thick GaAs-based Fabry-Perot filter and a 3.84 μm thick InP-based p-i-n absorption structure (with a 0.3 μm In_(0.53)Ga_(0.47)As absorption layer), was grown on a Si substrate. A crack-free and high-quality epilayer with an area of 800 × 700 μm~2 was obtained by using midpatterned growth and thermal-cycle annealing. Long dislocations running parallel to the GaAs/Si interface were formed by thermal annealing. This kind of dislocation may effectively alleviate the thermal stress across a large patterned area and be responsible for the crack-free epilayer. A photodetector with a spectral linewidth of 1.1 nm (full width at half maximum) and a quantum efficiency of 9.0% was demonstrated.
机译：单片集成的波长选择光电探测器，由11.86μm厚的GaAs基Fabry-Perot滤波器和3.84μm厚的InP基pin吸收结构组成（具有0.3μm的In_（0.53）Ga_（0.47）As吸收层） ，其生长在Si衬底上。通过中间图案化生长和热循环退火，获得了面积为800×700μm〜2的无裂纹高质量外延层。通过热退火形成平行于GaAs / Si界面的长位错。这种位错可以有效地缓解大图案区域上的热应力，并有助于无裂纹的外延层。证明了具有1.1nm的光谱线宽（半峰全宽）和9.0％的量子效率的光电检测器。

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  • 来源
    《Journal of Applied Physics》 |2008年第11期|100-104|共5页
  • 作者

    Hui Huang; Xiaomin Ren; Jihe Lv; Qi Wang; Hailan Song; Shiwei Cai; Yongqing Huang; Bo Qu;

  • 作者单位

    Key Laboratory of Optical Communication and Lightwave Technologies (Ministry of Education), Institute of Optical Commuinication and Optoelectronics, Beijing University of Posts and Telecommunications, P.O. Box 66 (Room 741), Beijing 100876, China;

    Key Laboratory of Optical Communication and Lightwave Technologies (Ministry of Education), Institute of Optical Commuinication and Optoelectronics, Beijing University of Posts and Telecommunications, P.O. Box 66 (Room 741), Beijing 100876, China;

    Key Laboratory of Optical Communication and Lightwave Technologies (Ministry of Education), Institute of Optical Commuinication and Optoelectronics, Beijing University of Posts and Telecommunications, P.O. Box 66 (Room 741), Beijing 100876, China;

    Key Laboratory of Optical Communication and Lightwave Technologies (Ministry of Education), Institute of Optical Commuinication and Optoelectronics, Beijing University of Posts and Telecommunications, P.O. Box 66 (Room 741), Beijing 100876, China;

    Key Laboratory of Optical Communication and Lightwave Technologies (Ministry of Education), Institute of Optical Commuinication and Optoelectronics, Beijing University of Posts and Telecommunications, P.O. Box 66 (Room 741), Beijing 100876, China;

    Key Laboratory of Optical Communication and Lightwave Technologies (Ministry of Education), Institute of Optical Commuinication and Optoelectronics, Beijing University of Posts and Telecommunications, P.O. Box 66 (Room 741), Beijing 100876, China;

    Key Laboratory of Optical Communication and Lightwave Technologies (Ministry of Education), Institute of Optical Commuinication and Optoelectronics, Beijing University of Posts and Telecommunications, P.O. Box 66 (Room 741), Beijing 100876, China;

    Jordan Valley Semiconductors UK Ltd, Shanghai 201206, China;

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