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首页> 外文期刊>Journal of Applied Physics >Reactive ion etching of high optical quality GaN/sapphire photonic crystal slab using CH_4-H_2 chemistry
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Reactive ion etching of high optical quality GaN/sapphire photonic crystal slab using CH_4-H_2 chemistry

机译：使用CH_4-H_2化学反应对高光学品质GaN /蓝宝石光子晶体平板进行离子刻蚀

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摘要

Reactive ion etching (RIE) using a CH_4-H_2 plasma is investigated for the fabrication of a GaN one-dimensional (1D) photonic crystal (PhC) slab. The dominant control parameter for the etch rate and the sidewall profile is the dc bias. The influence of operating pressure, CH_4/H_2 ratio, and total gas flow rate on the etching characteristics is also presented. An etch rate as high as 85 nm/min and an overcut angle as low as 5° obtained in this work are among the best values reported for conventional RIE technique. The CH_4-H_2 process is used to etch 1D PhCs with a lattice parameter ranging from 700 to 350 nm and an air filling factor of 0.30 into a 600-nm-thick GaN/sapphire slab. Sharp peaks corresponding to the resonant modes of the nanopatterned structures are observed in the experimental reflection spectra for all the lattice periods. Furthermore, the good optical quality of the nanostructures is evidenced by a resonantly enhanced second-harmonic generation experiment around 400 nm. A second-harmonic generation enhancement factor as high as 10~5 is obtained, compared with the unpatterned GaN reference slab. These results demonstrate that the CH_4-H_2 conventional RIE technique is well adapted to the etching of GaN PhC for the fabrication of next generation photonic devices exploiting nonlinear processes.
机译：研究了使用CH_4-H_2等离子体的反应离子刻蚀（RIE），用于制造GaN一维（1D）光子晶体（PhC）平板。蚀刻速率和侧壁轮廓的主要控制参数是直流偏置。还提出了工作压力，CH_4 / H_2比和总气体流速对刻蚀特性的影响。在这项工作中获得的高达85 nm / min的蚀刻速率和低至5°的过切角是传统RIE技术报道的最佳值。 CH_4-H_2工艺用于将600D厚度的GaN /蓝宝石平板上的晶格参数范围从700到350 nm和空气填充系数为0.30的1D PhC进行刻蚀。在所有晶格周期的实验反射光谱中观察到与纳米图案结构的共振模式相对应的尖峰。此外，通过在400nm附近共振增强的二次谐波产生实验证明了纳米结构的良好光学质量。与未图案化的GaN参考平板相比，可获得高达10〜5的二次谐波产生增强因子。这些结果表明，CH_4-H_2传统RIE技术非常适合于GaN PhC的刻蚀，用于利用非线性工艺制造下一代光子器件。

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