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首页> 外文期刊>Journal of Applied Physics >Interface roughening and defect nucleation during solid phase epitaxy regrowth of doped and intrinsic Si_(0.83)Ge_(0.17) alloys
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Interface roughening and defect nucleation during solid phase epitaxy regrowth of doped and intrinsic Si_(0.83)Ge_(0.17) alloys

机译：掺杂和本征Si_（0.83）Ge_（0.17）合金固相外延再生过程中的界面粗糙化和缺陷形核

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摘要

Metastable pseudomorphic Si_(0.83)Ge_(0.17) with thickness of 135 nm was deposited on (001) Si substrate by molecular beam epitaxy and amorphized to a depth of ～360 nm, using 3 X 10~(15) cm~(-2) Ge ions at 270 keV. Samples were regrown by solid phase epitaxy in the 500-600℃ temperature range. The regrowth rate was measured in situ by time resolved reflectivity, while the structure of the epilayers was investigated by transmission electron microscopy. Three regions can be distinguished in SiGe after solid phase epitaxy, independent of the annealing temperature: (1) a 20 nm defect-free layer close to the original crystal-amorphous interface, (2) a middle region with a high density of planar defects, and (3) a layer with dislocations and stacking faults extending up to the surface. The activation energy of the SiGe solid phase epitaxy is equal to the activation energy of Si except in the middle region. The amorphous-crystal interface evolution was studied by transmission electron microscopy of partially regrown samples. In order to study the effects of dopants, some samples were also implanted with B~+ and Sb~+ ions. At the ion projected range (125 nm for both implants) the regrowth rate increases by a factor of 3 with respect to the unimplanted SiGe, but the defect-free layer again is found to be about 20 nm in all cases. Moreover, the activation energy of the solid phase epitaxy regrowth process does not depend on dopant introduction, while the only observable effect of B or Sb incorporation is a smoothness of the amorphous-crystal interface during solid phase epitaxy.
机译：通过分子束外延在（001）Si衬底上沉积厚度为135 nm的亚稳态Si_（0.83）Ge_（0.17），并使用3 X 10〜（15）cm〜（-2）非晶化至〜360 nm的深度。 ）270 keV的Ge离子。样品在500-600℃的温度范围内通过固相外延生长。通过时间分辨反射率原位测量再生速率，同时通过透射电子显微镜研究外延层的结构。固相外延后，可以在SiGe中区分三个区域，而与退火温度无关：（1）接近原始晶体-非晶界面的20 nm无缺陷层；（2）具有高密度平面缺陷的中间区域（3）具有位错和堆垛层错的层一直延伸到地表。 SiGe固相外延的活化能等于Si的活化能，除了中间区域。通过透射电子显微镜研究了部分再生长的样品的非晶-晶体界面演化。为了研究掺杂剂的影响，一些样品还注入了B〜+和Sb〜+离子。在离子投射范围内（两个注入都为125 nm），相对于未注入的SiGe，再生速率增加了3倍，但是在所有情况下，都发现无缺陷层约为20 nm。此外，固相外延再生过程的活化能不取决于掺杂剂的引入，而掺入B或Sb的唯一可观察到的效果是固相外延过程中非晶晶体界面的光滑度。

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