Mechanical stress altered electron gate tunneling current and extraction of conduction band deformation potentials for germanium

Youn Sung Choi; Ji-Song Lim; Toshinori Numata; Toshikazu Nishida; Scott E. Thompson

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Mechanical stress altered electron gate tunneling current and extraction of conduction band deformation potentials for germanium

机译：机械应力改变的电子栅隧穿电流和锗导带形变电势的提取

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Strain altered electron gate tunneling current is measured for germanium (Ge) metal-oxide-semiconductor devices with HfO_2 gate dielectric. Uniaxial mechanical stress is applied using four-point wafer bending along [100] and [110] directions to extract both dilation and shear deformation potential constants of Ge. Least-squares fit to the experimental data results in Ξ_d and Ξ_u of -4.3±0.3 and 16.5±0.5 eV, respectively, which agree with theoretical calculations. The dominant mechanism for the strain altered electron gate tunneling current is a strain-induced change in the conduction band offset between Ge and HfO_2. Tensile stress reduces the offset and increases the gate tunneling current for Ge while the opposite occurs for Si.

机译：测量具有HfO_2栅极电介质的锗（Ge）金属氧化物半导体器件的应变改变后的电子栅极隧穿电流。使用沿[100]和[110]方向弯曲的四点晶片施加单轴机械应力，以提取Ge的膨胀和剪切变形电势常数。最小二乘拟合到实验数据的Ξ_d和Ξ_u分别为-4.3±0.3 eV和16.5±0.5 eV，这与理论计算相符。应变改变电子栅隧穿电流的主要机制是应变诱导的Ge和HfO_2之间的导带偏移变化。拉伸应力减小了偏移，并增加了锗的栅极隧穿电流，而硅则相反。

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来源
《Journal of Applied Physics》 |2007年第10期|p.104507.1-104507.5|共5页
作者
Youn Sung Choi; Ji-Song Lim; Toshinori Numata; Toshikazu Nishida; Scott E. Thompson;
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作者单位

Department of Electrical and Computer Engineering, University of Florida, Gainesville,Florida 32611, USA;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类应用物理学;计量学;
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Mechanical stress altered electron gate tunneling current and extraction of conduction band deformation potentials for germanium

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