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首页> 外文期刊>Journal of Applied Physics >Modeling room-temperature lasing spectra of 1.3-μm self-assembled InAs/GaAs quantum-dot lasers: Homogeneous broadening of optical gain under current injection
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Modeling room-temperature lasing spectra of 1.3-μm self-assembled InAs/GaAs quantum-dot lasers: Homogeneous broadening of optical gain under current injection

机译：模拟1.3μm自组装InAs / GaAs量子点激光器的室温激光光谱：电流注入下光增益的均匀展宽

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摘要

We studied the injection current dependence of room-temperature lasing spectra of a 1.3-μm self-assembled InAs/GaAs quantum-dot laser both experimentally and theoretically. Starting from the ground-state lasing with a few longitudinal modes, the spectra showed splitting, broadening, excited-state lasing, and quenching of the ground-state lasing as the current increased. We could explain this unique current dependence by numerical simulation based on our quantum-dot laser theory, taking into account the inhomogeneous and homogeneous broadening of the optical gain as well as the carrier relaxation processes in the spatially isolated quantum dots. Through the simulation, we found that the homogeneous broadening of the ground state is kept between 5 and 10 meV under the ground-state lasing, while it increases up to 20 meV under the excited-state lasing.
机译：我们在实验和理论上研究了1.3μm自组装InAs / GaAs量子点激光器室温激光光谱的注入电流依赖性。从具有几个纵向模式的基态激光开始，光谱显示随着电流的增加，分裂，变宽，激发态激光和基态激光的猝灭。考虑到光学增益的不均匀和均匀展宽以及在空间上隔离的量子点中的载流子弛豫过程，我们可以通过基于量子点激光理论的数值模拟来解释这种独特的电流依赖性。通过模拟，我们发现在基态激光作用下，基态的均匀展宽保持在5到10 meV之间，而在激发态激光作用下，基态的均匀展宽达到20 meV。

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