Electrical resistance of low-angle tilt grain boundaries in acceptor-doped SrTiO_3 as a function of misorientation angle

Roger A. De Souza; Juergen Fleig; Joachim Maier; Zaoli Zhang; Wilfried Sigle; Manfred Ruehle

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Electrical resistance of low-angle tilt grain boundaries in acceptor-doped SrTiO_3 as a function of misorientation angle

机译：掺杂受体的SrTiO_3中低角度倾斜晶界的电阻与取向角的关系

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The transport of charge across symmetrical low-angle [001] tilt grain boundaries in Fe-doped SrTiO_3 was examined. Grain boundary resistances were obtained from impedance spectroscopy measurements on bicrystals with misorientation angles θ=2.3°, 5.4°, and 7.8° as a function of temperature and oxygen partial pressure. By comparing these data with values predicted from a double Schottky-barrier model, we show that the resistance of a low-angle tilt grain boundary in acceptor-doped SrTiO_3 is correlated with its dislocation content, but in a nontrivial manner.

机译：研究了在掺Fe的SrTiO_3中对称对称的低角度[001]倾斜晶粒边界上的电荷传输。晶界电阻是从双晶晶体的阻抗谱测量获得的，其取向角θ= 2.3°，5.4°和7.8°是温度和氧分压的函数。通过将这些数据与从双肖特基势垒模型预测的值进行比较，我们表明，受主掺杂SrTiO_3中低角度倾斜晶界的电阻与其位错含量相关，但关系不大。

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来源
《Journal of Applied Physics》 |2005年第5期|p.053502.1-053502.7|共7页
作者
Roger A. De Souza; Juergen Fleig; Joachim Maier; Zaoli Zhang; Wilfried Sigle; Manfred Ruehle;
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Institut fuer Physikalische Chemie, RWTH Aachen, Germany;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类应用物理学;
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Electrical resistance of low-angle tilt grain boundaries in acceptor-doped SrTiO_3 as a function of misorientation angle

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