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首页> 外文会议>Fourth International Symposium on Ionic and Mixed Conducting Ceramics, null >ELECTRICAL AND STRUCTURAL CHARACTERISATION OF A LOW ANGLE TILT GRAIN BOUNDARY IN Fe-DOPED SrTiO_3
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ELECTRICAL AND STRUCTURAL CHARACTERISATION OF A LOW ANGLE TILT GRAIN BOUNDARY IN Fe-DOPED SrTiO_3

机译：Fe掺杂SrTiO_3中低角度倾斜晶界的电和结构表征

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摘要

The atomistic structure and electrical properties of a symmetrical 5.4°[001] tilt boundary in Fe-doped SrTiO_3 were investigated respectively by means of various Transmission Electron Microscopy (TEM) techniques and impedance spectroscopy. Weak beam dark-field imaging revealed that the boundary consists of a periodic array of dislocations. In high resolution TEM the dislocation cores appeared to be amorphous and were separated by regions of strained lattice. The a.c. impedance response of the bicrystal was measured in the frequency range 20 Hz < ω < 10~6 Hz between 553 K. and 693 K in PO_2 = 0.1 bar. The transport of charge across the array of dislocations that form the grain boundary was found to be strongly blocked. Analysis of the impedance data in terms of a simple Mott-Schottky model yielded a space charge potential that exhibited a weak dependence on temperature and was ～ 0.55 V in the investigated regime.
机译：利用各种透射电子显微镜（TEM）和阻抗谱，分别研究了Fe掺杂SrTiO_3中对称的5.4°[001]倾斜边界的原子结构和电学性质。弱束暗场成像显示边界由位错的周期性阵列组成。在高分辨率TEM中，位错核似乎是无定形的，并由应变晶格区域隔开。交流在PO_2 = 0.1 bar的情况下，在553 K和693 K之间的20 Hz <ω<10〜6 Hz频率范围内测量了双晶的阻抗响应。发现跨形成晶界的位错阵列的电荷传输被强烈阻止。根据简单的Mott-Schottky模型对阻抗数据进行分析，得出了空间电荷电势，该电势对温度的依赖性较弱，在研究范围内约为0.55V。

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