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首页> 外文期刊>Journal of Applied Physics >Investigation on (Al_(0.7)Ga_(0.3))_(0.5)In_(0.5)P/(Al_(0.3)Ga_(0.7))_(0.5)In_(0.5)P muiti-quantum-barrier superlattice using cross-sectional scanning tunneling microscopy
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Investigation on (Al_(0.7)Ga_(0.3))_(0.5)In_(0.5)P/(Al_(0.3)Ga_(0.7))_(0.5)In_(0.5)P muiti-quantum-barrier superlattice using cross-sectional scanning tunneling microscopy

机译：（Al_（0.7）Ga_（0.3））_（0.5）In_（0.5）P /（Al_（0.3）Ga_（0.7））_（0.5）In_（0.5）P多重量子垒超晶格的研究断面扫描隧道显微镜

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摘要

Cross-sectional scanning tunneling microscopy (XSTM) is used to study a multi-quantum-barrier (MQB) structure consisting of (Al_(0.7)Ga_(0.3))_(0.5)In_(0.5)P/(Al_(0.3)Ga_(0.7))_(0.5)In_(0.5)P semiconductor superlattice for use in AlGaInP laser devices. Quantitative analysis of the MQB was made difficult by poor image contrast due to the intrinsic small band offset of 80 meV between adjacent layers in the large band-gap semiconductor superlattices. This is in addition to the presence of cleavage-induced monatomic steps at the clean cleaved (110) surface as they effectively mask the weak electronic features of the superlattice. To overcome these problems, the image contrast was enhanced by the choice of tunneling conditions, in particular, reducing the tip-sample separation and the origin of this mechanism is believed to be associated with tip-induced band bending. In addition, the use of arithmetic manipulation of images to eliminate physical features such as step defects on the cleaved surface is also reported. This allowed quantitative analysis to be performed on the superlattice. Results from the XSTM studies showed that the (Al_(0.7)Ga_(0.3))_(0.5)In_(0.5)P/(Al_(0.3)Ga_(0.7))_(0.5)In_(0.5)P superlattices have very limited interdiffusion. This is in stark contrast to other MQB candidates involving Al_(0.5)In_(0.5)P/Ga_(0.5)In_(0.5)P and Al_(0.5)In_(0.5)P/(Al_(0.3)Ga_(0.7))_(0.5)In_(0.5)P superlattices which revealed extensive broadening of the well in the superlattices as previously studied by the authors.
机译：截面扫描隧道显微镜（XSTM）用于研究由（Al_（0.7）Ga_（0.3））_（0.5）In_（0.5）P /（Al_（0.3）组成的多量子势垒（MQB）结构Ga_（0.7））_（0.5）In_（0.5）P半导体超晶格，用于AlGaInP激光器件。由于大带隙半导体超晶格中相邻层之间固有的80 meV小频带偏移，使得图像对比度差，使得MQB的定量分析变得困难。这是除了在清洁的裂开的（110）表面处存在由裂开引起的单原子台阶之外，因为它们有效地掩盖了超晶格的弱电子特征。为了克服这些问题，通过选择隧穿条件来增强图像对比度，特别是减少尖端样品的分离，并且认为该机理的起源与尖端引起的带弯曲有关。另外，还报道了使用图像的算术操作来消除物理特征，例如劈开表面上的台阶缺陷。这允许对超晶格进行定量分析。 XSTM研究的结果表明（Al_（0.7）Ga_（0.3））_（0.5）In_（0.5）P /（Al_（0.3）Ga_（0.7））_（0.5）In_（0.5）P超晶格具有相互扩散有限。这与涉及Al_（0.5）In_（0.5）P / Ga_（0.5）In_（0.5）P和Al_（0.5）In_（0.5）P /（Al_（0.3）Ga_（0.7））的其他MQB候选人形成鲜明对比。作者先前研究过的_（0.5）In_（0.5）P超晶格揭示了超晶格中井的广泛拓宽。

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