Electrophysical Characteristics and Structural Parameters of Metamorphic HEMT Nanoheterostructures In_(0.7)Al_(0.3)As/In_(0.7)Ga_(0.3)As/In_(0.7)Al_(0.3)As Containing Superlattices with Different Numbers of Periods in the Metamorphic Buffer

G. B. Galiev; S. S. Pushkarev; A. S. Orekhov; R. R. Galiev; E. A. Klimov; P. P. Maltsev; R. M. Imamov

首页> 外文期刊>Crystallography reports >Electrophysical Characteristics and Structural Parameters of Metamorphic HEMT Nanoheterostructures In_(0.7)Al_(0.3)As/In_(0.7)Ga_(0.3)As/In_(0.7)Al_(0.3)As Containing Superlattices with Different Numbers of Periods in the Metamorphic Buffer

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Electrophysical Characteristics and Structural Parameters of Metamorphic HEMT Nanoheterostructures In_(0.7)Al_(0.3)As/In_(0.7)Ga_(0.3)As/In_(0.7)Al_(0.3)As Containing Superlattices with Different Numbers of Periods in the Metamorphic Buffer

机译：变质缓冲液中含有具有不同周期数的超晶格的变质HEMT纳米异质结构In_（0.7）Al_（0.3）As / In_（0.7）Ga_（0.3）As / In_（0.7）Al_（0.3）As的电物理特性和结构参数

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The results of studying the electrophysical characteristics and structural parameters of metamorphic In_(0.7)Al_(0.3)As/In_(0.7)Ga_(0.3)As/In_(0.7)Al_(0.3)As HEMT nanoheterostructures epitaxially grown on GaAs (100) substrates have been presented. A linear metamorphic buffer with inserted unbalanced superlattices characterized by different numbers of periods is used. Transmission electron microscopy has shown that an increase in the number of superlattice periods from 5 to 30 promotes the improvement of the crystal structure. In this case, the electrophysical parameters of metamorphic HEMT nanoheterostructures are also significantly improved.

机译：研究在GaAs（100）上外延生长的变质In_（0.7）Al_（0.3）As / In_（0.7）Ga_（0.3）As / In_（0.7）Al_（0.3）As HEMT纳米异质结构的电物理特性和结构参数的结果已经提出了底物。使用具有插入的不平衡超晶格的线性变态缓冲区，其特征是周期数不同。透射电子显微镜显示，超晶格周期数从5增加到30可促进晶体结构的改善。在这种情况下，变质HEMT纳米异质结构的电物理参数也得到了显着改善。

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《Crystallography reports》 |2014年第3期|共5页
作者
G. B. Galiev; S. S. Pushkarev; A. S. Orekhov; R. R. Galiev; E. A. Klimov; P. P. Maltsev; R. M. Imamov;
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正文语种 eng
中图分类晶体学;
关键词
Electrophysical; Characteristics; Structural;

机译：电物理;特性;结构;

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1. Electrophysical Characteristics and Structural Parameters of Metamorphic HEMT Nanoheterostructures In_(0.7)Al_(0.3)As/In_(0.7)Ga_(0.3)As/In_(0.7)Al_(0.3)As Containing Superlattices with Different Numbers of Periods in the Metamorphic Buffer [J] . G. B. Galiev, S. S. Pushkarev, A. S. Orekhov, Crystallography reports . 2014,第3期

机译：变质缓冲液中含有具有不同周期数的超晶格的变质HEMT纳米异质结构In_（0.7）Al_（0.3）As / In_（0.7）Ga_（0.3）As / In_（0.7）Al_（0.3）As的电物理特性和结构参数
2. Photoluminescence Studies of In_(0.7)Al_(0.3)As/In_(0.75)Ga_(0.25)As/In_(0.7)Al_(0.3)As Metamorphic Heterostructures on GaAs Substrates [J] . G. B. Galiev, E. A. Klimov, A. N. Klochkov, Semiconductors . 2014,第5期

机译：GaAs衬底上In_（0.7）Al_（0.3）As / In_（0.75）Ga_（0.25）As / In_（0.7）Al_（0.3）As变质异质结构的光致发光研究
3. Investigation on (Al_(0.7)Ga_(0.3))_(0.5)In_(0.5)P/(Al_(0.3)Ga_(0.7))_(0.5)In_(0.5)P muiti-quantum-barrier superlattice using cross-sectional scanning tunneling microscopy [J] . K. S. Teng, R. J. Cobley, M. R. Brown, Journal of Applied Physics . 2005,第3期

机译：（Al_（0.7）Ga_（0.3））_（0.5）In_（0.5）P /（Al_（0.3）Ga_（0.7））_（0.5）In_（0.5）P多重量子垒超晶格的研究断面扫描隧道显微镜
4. Influence of metamorphic buffer design on electrophysical and structural properties of MHEMT nanoheterostructures In_(0.7)Al_(0.3)As/In_(0.7)Ga_(0.3)As/In_(0.7)Al_(0.3)As/GaAs [C] . S.S. Pushkarev, G.B. Galiev, E.A. Klimov, International conference on micro- and nano-electronics . 2013

机译：变质缓冲剂设计对MHEMT纳米异质结构In_（0.7）Al_（0.3）As / In_（0.7）Ga_（0.3）As / In_（0.7）Al_（0.3）As / GaAs的电物理和结构性质的影响
5. The Influence of Clamping and Residual Stress on Scaling Effects in Pb(Zr0.3Ti0.7)O3 Thin Films for Piezomems Applications [D] . Denis, Lyndsey M. . 2019

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6. Manipulating magnetoelectric properties by interfacial coupling in La0.3Sr0.7MnO3/Ba0.7Sr0.3TiO3 superlattices [O] . Haizhong Guo, Qingqing Li, Zhengzhong Yang, -1

机译：通过La0.3Sr0.7MnO3 / Ba0.7Sr0.3TiO3超晶格的界面耦合控制磁电性能
7. Effect of an InP/In_{0.53}Ga_{0.47}As interface on spin-orbit interaction in In_{0.52}Al_{0.48}As/In_{0.53}Ga_{0.47}As heterostructures [O] . Lin, Yiping, Koga, Takaaki, Nitta, Junsaku 2005

机译：InP / In_ {0.53} Ga_ {0.47} As界面对In_ {0.52} Al_ {0.48} As / In_ {0.53} Ga_ {0.47} As异质结构中自旋轨道相互作用的影响

Electrophysical Characteristics and Structural Parameters of Metamorphic HEMT Nanoheterostructures In_(0.7)Al_(0.3)As/In_(0.7)Ga_(0.3)As/In_(0.7)Al_(0.3)As Containing Superlattices with Different Numbers of Periods in the Metamorphic Buffer

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