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首页> 外文期刊>Journal of Applied Physics >Telegraphic switching signals by magnet tunnel junctions for neural spiking signals with high information capacity
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Telegraphic switching signals by magnet tunnel junctions for neural spiking signals with high information capacity

机译:磁隧道结的电报转换信号,用于具有高信息容量的神经尖峰信号

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Magnetic tunnel junctions (MTJs) operating in the superparamagnetic regime produce telegraphic signals that emulate neural spiking signals. Previous studies have characterized the random spiking signals produced by MTJs in terms of the percentage of time spent in the anti-parallel (AP) magnetization state (referred to as the "AP rate") but ignore the switching rate of the MTJ. In this work, we demonstrate that with proper tuning of both an external bias field and a bias voltage, we can control the average dwell time in the AP-state and P-state pulses separately. Our data show that the AP rate can be tuned with bias voltages ranging from 310 mV to 460 mV and bias fields from -200 Oe to -230 Oe. The average dwell times in each state ranged from 225 ns to 285 mu s and could be controlled separately. This suggests that neural spiking signals produced by MTJs can be decoded by both the spike rate and the spike count, which creates the possibility for increasing the information capacity in the rate coding scheme. Published by AIP Publishing.
机译:在超顺磁状态下运行的磁性隧道结(MTJ)产生模拟神经突波信号的电报信号。先前的研究已经根据在反平行(AP)磁化状态下花费的时间百分比(称为“ AP速率”)来表征了MTJ产生的随机尖峰信号,但忽略了MTJ的切换速率。在这项工作中,我们证明了通过适当调整外部偏置场和偏置电压,我们可以分别控制AP状态和P状态脉冲的平均停留时间。我们的数据表明,AP速率可通过310 mV至460 mV的偏置电压和-200 Oe至-230 Oe的偏置场进行调整。每种状态下的平均驻留时间范围为225 ns至285μs,可以单独控制。这表明可以通过尖峰速率和尖峰计数对MTJ产生的神经尖峰信号进行解码,这为在速率编码方案中增加信息容量提供了可能性。由AIP Publishing发布。

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