Internal quantum efficiency measurements in InAs/GaSb superlattices for midinfrared emitters

Muhowski A. J.; Muellerleile A. M.; Olesberg J. T.; Prineas J. P.

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Internal quantum efficiency measurements in InAs/GaSb superlattices for midinfrared emitters

机译：内部微量发射器INAS / GASB超晶格中的内部量子效率测量

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The internal quantum efficiency of a series of InAs/GaSb superlattices was investigated as a function of carrier generation rate through variable excitation, quasicontinuous-wave photoluminescence measurements. GaSb thicknesses were varied to maximize the internal quantum efficiency for midwave infrared emission. Internal quantum efficiencies were determined from measurements of the photoluminescence radiance and extraction efficiencies computed within a two-slab model. The peak internal quantum efficiencies varied from 15% to 29% at 77 K, which is in good agreement with expectations from InAs/GaSb superlattice light-emitting diode performance.

机译：通过可变激发，准连续波光致发光测量，研究了一系列INAS / GASB超晶格的内部量子效率。变化气体厚度以使中空红外发射的内部量子效率最大化。根据在双板模型内计算的光致发光辐射和提取效率的测量确定内部量子效率。峰值内量子效率在77 k下变化为15％至29％，与INAS / GASB超晶格发光二极管性能的预期吻合良好。

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《Journal of Applied Physics》 |2019年第24期|243101.1-243101.6|共6页
作者
Muhowski A. J.; Muellerleile A. M.; Olesberg J. T.; Prineas J. P.;
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作者单位

Univ Iowa Dept Phys & Astron Iowa City IA 52242 USA|Univ Iowa Iowa CREATES Iowa City IA 52242 USA;

Univ Iowa Dept Phys & Astron Iowa City IA 52242 USA|Univ Iowa Iowa CREATES Iowa City IA 52242 USA;

Univ Iowa Dept Phys & Astron Iowa City IA 52242 USA|Univ Iowa Iowa CREATES Iowa City IA 52242 USA;

Univ Iowa Dept Phys & Astron Iowa City IA 52242 USA|Univ Iowa Iowa CREATES Iowa City IA 52242 USA|Univ Iowa Dept Elect & Comp Engn Iowa City IA 52242 USA;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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1. Measurement of absorption and external quantum efficiency of an InAs/GaSb Type II superlattice [J] . Katayama Haruyoshi, Takekawa Tomoko, Kimata Masafumi, Infrared physics and technology . 2015,第Null期

机译：InAs / GaSb II型超晶格的吸收和外部量子效率的测量
2. InAs/GaSb superlattice interband cascade light emitting diodes with high output power and high wall-plug efficiency [J] . Zhou Yi, Lu Qi, Chai Xuliang, Applied Physics Letters . 2019,第25期

机译：具有高输出功率和高壁挂效率的InAs / GaSb超晶格带间级联发光二极管
3. InAs/GaSb superlattice interband cascade light emitting diodes with high output power and high wall-plug efficiency [J] . Zhou Yi, Lu Qi, Chai Xuliang, Applied Physics Letters . 2019,第25期

机译：INAS / GASB超晶格与高输出功率和高壁插头效率高级联级联发光二极管
4. InAs/GaSb Type Ⅱ superlattice barrier devices with a low dark current and a high quantum efficiency [C] . P.C. Klipstein, E. Avnon, Y. Benny, Conference on infrared technology and applications . 2014

机译：低暗电流和高量子效率的InAs / GaSbⅡ型超晶格势垒器件
5. Advances in Inas/Gasb Type-II Superlattice Light-Emitting Diode Arrays [D] . Ricker, Russell J. 2017

机译：INAS / GASB Type-II超晶格发光二极管阵列的进步
6. Detecting Spatially Localized Exciton in Self-Organized InAs/InGaAs Quantum Dot Superlattices: a Way to Improve the Photovoltaic Efficiency [O] . Maher Ezzedini, Tarek Hidouri, Mohamed Helmi Hadj Alouane, 2017

机译：检测自组织InAs / InGaAs量子点超晶格中的空间局部激子：一种提高光伏效率的方法
7. InAs/GaSb superlattice interband cascade light emitting diodes with high output power and high wall-plug efficiency [O] . Yi Zhou, Qi Lu, Xuliang Chai, 2019

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8. Study of Residual Background Carriers in Midinfrared InAs/GaSb Superlattices for Uncooled Detector Operation (POSTPRINT); Journal article [R] . Haugan, H. J., Elhamri, S., Szmulowicz, F., 2008

机译：用于非制冷探测器操作的中红外Inas / Gasb超晶格中残留背景载流子的研究（pOsTpRINT）;杂志文章

Internal quantum efficiency measurements in InAs/GaSb superlattices for midinfrared emitters

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