Measurement of absorption and external quantum efficiency of an InAs/GaSb Type II superlattice

Katayama Haruyoshi; Takekawa Tomoko; Kimata Masafumi; Inada Hiroshi; Iguchi Yasuhiro

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Measurement of absorption and external quantum efficiency of an InAs/GaSb Type II superlattice

机译：InAs / GaSb II型超晶格的吸收和外部量子效率的测量

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摘要

We present an experimental result of absorption and external quantum efficiency measurements of an InAs/GaSb Type II superlattice (T2SL). The probed T2SL sample consisted of a 6 gm cutoff p-i-n diode having a 300-period superlattice with a 9-monolayer (ML) GaSb /0.9 ML InSb/7 ML InAs on a p-type GaSb substrate.

机译：我们介绍了InAs / GaSb II型超晶格（T2SL）的吸收和外部量子效率测量的实验结果。探查到的T2SL样品由一个6 gm截止的p-i-n二极管组成，该二极管在p型GaSb衬底上具有300个周期的超晶格和9个单层（ML）GaSb /0.9 ML InSb / 7 ML InAs。

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来源
《Infrared physics and technology》 |2015年第null期|共5页
作者
Katayama Haruyoshi; Takekawa Tomoko; Kimata Masafumi; Inada Hiroshi; Iguchi Yasuhiro;
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正文语种 eng
中图分类红外线;红外技术及仪器;
关键词
InAs/GaSb Type-II superlattice; Mid-wavelength infrared; Absorption; Quantum efficiency;

机译：InAs / GaSb II型超晶格;中波红外;吸收;量子效率;

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专利

1. Measurement of absorption and external quantum efficiency of an InAs/GaSb Type II superlattice [J] . Katayama Haruyoshi, Takekawa Tomoko, Kimata Masafumi, Infrared physics and technology . 2015,第Null期

机译：InAs / GaSb II型超晶格的吸收和外部量子效率的测量
2. Internal quantum efficiency measurements in InAs/GaSb superlattices for midinfrared emitters [J] . Muhowski A. J., Muellerleile A. M., Olesberg J. T., Journal of Applied Physics . 2019,第24期

机译：内部微量发射器INAS / GASB超晶格中的内部量子效率测量
3. Structural and optical characterization of InAs/GaSb type-II superlattices: Influence of the change in InAs and GaSb layer thicknesses for fixed InSb-like interfaces [J] . Arikan Bulent, Korkmaz Melih, Aslan Bulent, Thin Solid Films . 2015,第auga31期

机译：InAs / GaSb II型超晶格的结构和光学表征：固定的类似于InSb的界面的InAs和GaSb层厚度变化的影响
4. InAs/GaSb Type II superlattice barrier devices with a low dark current and a high quantum efficiency. [C] . P.C. Klipstein, E. Avnon, Y. Benny, SPIE Conference on Infrared Technology and Applications . 2014

机译：INAS / GASB II型超晶格屏障装置，具有低暗电流和高量子效率。
5. Dark Current Suppression, Optical Performance Improvement and High Frequency Operation of InAs/GaSb and InAs/InAsSb Type-II Superlattices-Based Infrared Devices [D] . Chevallier, Romain. 2019

机译：InAs / GaSb和基于InAs / InAsSb II型超晶格的红外器件的暗电流抑制，光学性能改进和高频操作
6. Metalorganic chemical vapor deposition growth of InAs/GaSb type II superlattices with controllable AsxSb1-x interfaces [O] . Li-Gong Li, Shu-Man Liu, Shuai Luo, 2012

机译：具有可控AsxSb1-x界面的InAs / GaSb II型超晶格的金属有机化学气相沉积生长
7. Growth and Characterization of GaSb-Based Type-II InAs/GaSb Superlattice Photodiodes for Mid-Infrared Detection [O] . Wang GW (Wang Guo-Wei), Xu YQ (Xu Ying-Qiang), Guo J (Guo Jie), 2010

机译：用于中红外检测的基于GaSb的II型InAs / GaSb超晶格光电二极管的生长和表征

Measurement of absorption and external quantum efficiency of an InAs/GaSb Type II superlattice

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