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首页> 外文期刊>Journal of Applied Physics >Degradation of InGaN-based LEDs: Demonstration of a recombination-dependent defect-generation process
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Degradation of InGaN-based LEDs: Demonstration of a recombination-dependent defect-generation process

机译：基于INGAN的LED的降解：依赖于复合依赖性缺陷的过程的演示

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摘要

This paper provides insights into the degradation of InGaN-based LEDs by presenting a comprehensive analysis carried out on devices having two quantum wells (QWs) with different emission wavelengths (495 nm and 405 nm). Two different configurations are considered: one with the 495 nm QW closer to the p-side and one with the 495 nm QW closer to the n-side. The original results collected within this work indicate that (i) during stress, the devices show an increase in defect-related leakage both in reverse and low-forward voltage ranges: current increases with the square-root of stress time, indicating the presence of a diffusion process; (ⅱ) stress induces a decrease in the luminescence signal emitted by both quantum wells: the drop in luminescence is stronger when measurements are carried out at low current levels, indicating that degradation is due to the generation of Shockley-Read-Hall recombination centers; (ⅲ) remarkably, the degradation rate is linearly dependent on the luminescence signal emitted before stress by the well, indicating that carrier density impacts on degradation; and (ⅳ) the optical degradation rate has a linear dependence on the stress current density. The results strongly suggest the existence of a recombination-driven degradation process: the possible role of Shockley-Read-Hall and Auger recombination is discussed. The properties of the defects involved in the degradation process are described through steady-state photocapacitance measurements.
机译：本文通过在具有不同发射波长（495nm和405nm）的具有两个量子阱（QWS）的装置上进行了综合分析，提供了对基于INGAN的LED的降解的洞察。考虑了两种不同的配置：一个带有495nm qw更接近p侧的qw，一个带有495nm qw更接近n侧的qw。在此作品中收集的原始结果表明（i）在压力期间，该器件在反向和低前进电压范围内显示出缺陷相关泄漏的增加：电流随着应力时间的平方根而增加，表明存在扩散过程; （Ⅱ）应力引起两个量子阱发出的发光信号的降低：当在低电流水平下进行测量时，发光下降更强，表明降解是由于震撼读音乐厅重组中心的产生; （Ⅲ）显着性，降解速率是线性的，依赖于井在压力前发射的发光信号，表明载流子密度对降解产生影响; （ⅳ）光学劣化率对应力电流密度具有线性依赖性。结果强烈建议存在重组驱动的降解过程：讨论了震惊读音室和螺旋钻重组的可能作用。通过稳态光电容测量描述降解过程中涉及的缺陷的性质。

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  • 来源
    《Journal of Applied Physics》 |2020年第18期|185701.1-185701.7|共7页
  • 作者

    N. Renso; C. De Santi; A. Caria; F. Dalla Torre; L. Zecchin; G. Meneghesso; E. Zanoni; M. Meneghini;

  • 作者单位

    Department of Information Engineering University of Padova via Gradenigo 6/B 35131 Padova Italy;

    Department of Information Engineering University of Padova via Gradenigo 6/B 35131 Padova Italy;

    Department of Information Engineering University of Padova via Gradenigo 6/B 35131 Padova Italy;

    Department of Information Engineering University of Padova via Gradenigo 6/B 35131 Padova Italy;

    Department of Information Engineering University of Padova via Gradenigo 6/B 35131 Padova Italy;

    Department of Information Engineering University of Padova via Gradenigo 6/B 35131 Padova Italy;

    Department of Information Engineering University of Padova via Gradenigo 6/B 35131 Padova Italy;

    Department of Information Engineering University of Padova via Gradenigo 6/B 35131 Padova Italy;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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