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首页> 外文期刊>Journal of Applied Physics >Nanojoining and tailoring of current-voltage characteristics of metal-P type semiconductor nanowire heterojunction by femtosecond laser irradiation
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Nanojoining and tailoring of current-voltage characteristics of metal-P type semiconductor nanowire heterojunction by femtosecond laser irradiation

机译：由飞秒激光照射金属-P型半导体纳米线异质结的电流 - 电压特性纳米加速和剪裁

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摘要

Selective engineering of the interface between nanoscale components and the electrical properties of heterojunctions is key to the development of next-generation nanoscale circuit elements. In this paper, we show how laser processing of a metal-P type semiconductor nanoscale heterojunction between Ag and CuO nanowires can be used to control the nature of the electrical contact by reducing the Schottky barrier at the Ag-CuO interface to Ohmic contact. Elimination of the Schottky barriers occurs in response to lattice matching of Ag(111)||CuO(111) planes at the interface induced by controlled irradiation with femtosecond (fs) laser pulses. An interdiffusion region with a mixed Ag/CuO composition is also present over a localized area of the interface between the Ag and CuO nanowires after fs laser processing, but both Ag and CuO nanowires remain crystalline away from the heterojunction. In addition, the Ag nanowire becomes totally embedded in the larger CuO nanowire after irradiation. Fabricated nanowire devices from Ag-CuO nanowire heterojunctions transition from a double-Schottky contact configuration prior to laser processing to a rectifying behavior as irradiation time increases. This study illustrates that fs laser processing can be highly effective in the engineering of electrical performance in metal-semiconductor nanoscale heterojunction devices.
机译：纳米级部件之间的界面的选择性工程和异质结的电性能是下一代纳米级电路元件的开发的关键。在本文中，我们展示了AG和CuO纳米线之间的金属-P型半导体纳米级异质结的激光加工如何通过将肖特基屏障在Ag-CuO界面处减少到欧姆接触来控制电触点的性质。消除肖特基屏障的消除响应于通过使用Femtosecond（FS）激光脉冲的受控照射引起的界面的晶格（111）|| CuO（111）平面的晶格匹配。具有混合Ag / CuO组合物的间隔区域也存在于FS激光加工后Ag和CuO纳米线之间的界面的局部区域上，但是Ag和CuO纳米线均远离异质结晶体。另外，在照射后，Ag纳米线完全嵌入较大的CuO纳米线中。在激光加工之前从双肖波接触配置转变为辐射时间，从双肖氏接触配置转变为辐射时间，从双肖氏键接触配置转变为整流行为。本研究说明FS激光加工在金属半导体纳米级异质结装置中的电气性能的工程中可以高效。

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  • 来源
    《Journal of Applied Physics》 |2020年第18期|184901.1-184901.8|共8页
  • 作者

    M. Xiao; L. Lin; S. Xing; J. Feng; Z. Hui; S. Wang; W. W. Duley; Y. N. Zhou;

  • 作者单位

    Department of Mechanical and Mechatronics Engineering University of Waterloo Waterloo Ontario N2L 3G1 Canada Centre for Advanced Materials Joining University of Waterloo Waterloo Ontario N2L 3G1 Canada;

    Empa Swiss Federal Laboratories for Materials Science and Technology UEberlandstrasse 129 8600 Dubendorf Switzerland;

    Department of Mechanical Engineering State Key Laboratory of Tribology Tsinghua University Beijing 100084 People's Republic of China;

    Centre for Advanced Materials Joining University of Waterloo Waterloo Ontario N2L 3G1 Canada State Key Laboratory of Advanced Welding and Joining Harbin Institute of Technology Harbin 150001 People's Republic of China;

    Centre for Advanced Materials Joining University of Waterloo Waterloo Ontario N2L 3G1 Canada School of Materials Science and Technology China University of Geosciences Beijing 100083 People's Republic of China;

    Centre for Advanced Materials Joining University of Waterloo Waterloo Ontario N2L 3G1 Canada Laser Micro/Nano Fabrication Laboratory School of Mechanical Engineering Beijing Institute of Technology Beijing 100081 People's Republic of China;

    Centre for Advanced Materials Joining University of Waterloo Waterloo Ontario N2L 3G1 Canada Department of Physics and Astronomy University of Waterloo Waterloo Ontario N2L 3G1 Canada;

    Department of Mechanical and Mechatronics Engineering University of Waterloo Waterloo Ontario N2L 3G1 Canada Centre for Advanced Materials Joining University of Waterloo Waterloo Ontario N2L 3G1 Canada;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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