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首页> 外文期刊>Journal of Applied Physics >Defect suppression in wet-treated etched-and-regrown nonpolar m-plane CaN vertical Schottky diodes: A deep-level optical spectroscopy analysis
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Defect suppression in wet-treated etched-and-regrown nonpolar m-plane CaN vertical Schottky diodes: A deep-level optical spectroscopy analysis

机译：湿处理的蚀刻和再生非极性M平面中的缺陷抑制可以垂直肖特基二极管：深度光谱分析

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Steady-state photocapacitance (SSPC) was conducted on nonpolar m-plane GaN n-type Schottky diodes to evaluate the defects induced by inductively coupled plasma (ICP) dry etching in etched-and-regrown unipolar structures. An ～10× increase in the near-midgap E_c - 1.9 eV level compared to an as-grown material was observed. Defect levels associated with regrowth without an etch were also investigated. The defects in the regrown structure (without an etch) are highly spatially localized to the regrowth interface. Subsequently, by depth profiling an etched-and-regrown sample, we show that the intensities of the defect-related SSPC features associated with dry etching depend strongly on the depth away from the regrowth interface, which is also reported previously [Nedy et al, Semicond. Sci. Technol. 30, 085019 (2015); Fang et al, Jpn. J. Appl. Phys. 42, 4207-4212 (2003); and Cao et al, IEEE Trans. Electron Devices 47, 1320-1324 (2000)]. A photoelectro-chemical etching (PEC) method and a wet AZ400K treatment are also introduced to reduce the etch-induced deep levels. A significant reduction in the density of deep levels is observed in the sample that was treated with PEC etching after dry etching and prior to regrowth. An ~2x reduction in the density of E_c - 1.9 eV level compared to a reference etched-and-regrown structure was observed upon the application of PEC etching treatment prior to the regrowth. The PEC etching method is promising for reducing defects in selective-area doping for vertical power switching structures with complex geometries [Meyers et al., J. Electron. Mater. 49, 3481-3489 (2020)].
机译：在非极性M平面GaN n型肖特基二极管上进行稳态光电容器（SSPC），以评估通过蚀刻和再松散的单极结构中的电感耦合等离子体（ICP）干法蚀刻诱导的缺陷。与观察到的近距离近距离E_C-1.9 EV水平的〜10倍增加。还研究了没有蚀刻的再生相关的缺陷水平。再生结构（没有蚀刻）中的缺陷高度空间地定位于再生界面。随后，通过深度分析蚀刻和再生的样品，我们表明与干蚀刻相关的缺陷相关的SSPC特征的强度依赖于远离再生界面的深度，这也报告了此前[Nedy等，半透明。 SCI。技术。 30，085019（2015）; Fang等人，JPN。 J. Appl。物理。 42,4207-4212（2003）;和cao等，ieee trans。电子器件47,1320-1324（2000）]。还引入了光电学蚀刻（PEC）方法和湿式AZ400K处理以减少蚀刻诱导的深水平。在样品中观察到在干蚀刻后用PEC蚀刻处理的样品中观察到深度密度的显着降低，并且在再生之前。在在再生之前施用PEC蚀刻治疗时，观察到与参考蚀刻和再生结构相比的〜2x的密度降低。 PEC蚀刻方法是对具有复杂几何形状的垂直电源开关结构的选择性面积掺杂中的缺陷的有希望[Meyers等，J.电子。母娘。 49,3481-3489（2020）]。

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  • 来源
    《Journal of Applied Physics》 |2020年第18期|185703.1-185703.9|共9页
  • 作者

    Andrew Aragon; Morteza Monavarian; Greg Pickrell; Mary Crawford; Andrew Allerman; Daniel Feezell; Andrew M.Armstrong;

  • 作者单位

    Center for High-Technology Materials The University of New Mexico Albuquerque New Mexico 87106 USA;

    Center for High-Technology Materials The University of New Mexico Albuquerque New Mexico 87106 USA;

    Sandia National Laboratories Albuquerque New Mexico 87123 USA;

    Sandia National Laboratories Albuquerque New Mexico 87123 USA;

    Sandia National Laboratories Albuquerque New Mexico 87123 USA;

    Center for High-Technology Materials The University of New Mexico Albuquerque New Mexico 87106 USA;

    Sandia National Laboratories Albuquerque New Mexico 87123 USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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