Phase-field modeling of the non-congruent crystallization of a ternary Ge-Sb-Te alloy for phase-change memory applications

R. Bayle; O. Cueto; S. Blonkowski; T. Philippe; H.Henry; M. Plapp

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Phase-field modeling of the non-congruent crystallization of a ternary Ge-Sb-Te alloy for phase-change memory applications

机译：用于相变存储器应用的三元GE-SB-TE合金的非全体结晶的相场建模

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The ternary alloy of germanium, antimony, and tellurium (GST) is widely used as a material for phase-change memories. In particular, the stoichiometric compound Ge_2S_b2Te_5 exhibits a rapid congruent crystallization. To increase the temperature at which spontaneous crystallization erases the stored information, alloys that are enriched in germanium have been investigated. Their crystallization is accompanied by segregation and eventually the nucleation of a new, germanium-rich phase. In order to model the redistribution of alloy components and the time evolution of the microstructure during device operations, we develop a multi-phase-field model for the crystallization of GST that includes segregation and couple it with orientation fields that describe the grain structure. We demonstrate that this model is capable to capture both the emergence of a two-phase polycrystalline structure starting from an initially amorphous material, and the melting and recrystallization during the SET and RESET operations in a memory cell of the "wall" type.

机译：锗，锑和碲（GST）的三元合金广泛用作相变存储器的材料。特别地，化学计量化合物GE_2S_B2TE_5表现出快速的结晶。为了增加自发结晶消除所存储的信息的温度，研究了富含锗的合金。它们的结晶伴有偏析，最终富含富含锗的阶段的核心。为了模拟合金组分的重新分配和器件操作期间微结构的时间演化，我们开发了一种多相场模型，用于GST的结晶，包括偏析并将其与描述晶粒结构的定向场耦合。我们证明该模型能够从最初的无定形材料开始捕获两相多晶结构的出现，以及在“墙壁”类型的存储器单元中的集合和复位操作期间的熔化和重结晶。

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《Journal of Applied Physics》 |2020年第18期|185101.1-185101.13|共13页
作者
R. Bayle; O. Cueto; S. Blonkowski; T. Philippe; H.Henry; M. Plapp;
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EA-LETI Universite Grenoble Alpes 38000 Grenoble France STMicroelectronics 850 rue Jean Monnet 38926 Crolles France Laboratoire de Physique de la matiere condensee Ecole Polytechnique CNRS IP Paris 91128 Palaiseau France;

EA-LETI Universite Grenoble Alpes 38000 Grenoble France;

EA-LETI Universite Grenoble Alpes 38000 Grenoble France STMicroelectronics 850 rue Jean Monnet 38926 Crolles France;

Laboratoire de Physique de la matiere condensee Ecole Polytechnique CNRS IP Paris 91128 Palaiseau France;

Laboratoire de Physique de la matiere condensee Ecole Polytechnique CNRS IP Paris 91128 Palaiseau France;

Laboratoire de Physique de la matiere condensee Ecole Polytechnique CNRS IP Paris 91128 Palaiseau France;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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1. Global and local structures of the Ge-Sb-Te ternary alloy system for a phase-change memory device [J] . Jae-Hyeon Eom, Young-Gui Yoon, Changwon Park, Physical review. B, Condensed Matter And Materials Physics . 2006,第21期

机译：用于相变存储器件的Ge-Sb-Te三元合金系统的整体和局部结构
2. Microscopic origin of the fast crystallization ability of Ge-Sb-Te phase-change memory materials [J] . J.HEGEDUS, S.R.ELLIOTT Nature Materials . 2008,第5期

机译：Ge-Sb-Te相变存储材料快速结晶能力的微观成因
3. Epitaxy of Ge-Sb-Te phase-change memory alloys [J] . Wolfgang Braun, Roman Shayduk, Timur Flissikowski, Applied Physicsletters . 2009,第3期

机译：Ge-Sb-Te相变记忆合金的外延
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机译：掺杂对相变存储应用Ge-Sb-Te薄膜结晶动力学的影响
5. Dynamic thermo-mechanical phase-field models for martensitic transformations in shape memory alloys. [D] . Dhote, Rakesh. 2014

机译：形状记忆合金中马氏体相变的动态热机械相场模型。
6. Phase-Change Memory Properties of Electrodeposited Ge-Sb-Te Thin Film [O] . Ruomeng Huang, Gabriela P. Kissling, Andrew Jolleys, 2015

机译：电沉积Ge-Sb-Te薄膜的相变记忆特性
7. Atomistic Origin of the Enhanced Crystallization Speed and n-Type Conductivity in Bi-doped Ge-Sb-Te Phase-Change Materials [O] . Skelton Jonathan, Pallipurath Anuradha, Lee TaeHoon, 2014

机译：双掺杂Ge-Sb-Te相变材料中结晶速度和n型电导率提高的原子起源
8. Application of a Ternary Phase-Field Model to Precipitation Behavior in Ni-Al-Cr Alloys (Preprint) [R] . Simmons, J. P., Woodward, C., Wen, Y. H. 2009

机译：三元相场模型在Ni-al-Cr合金中的析出行为的应用（预印本）

Phase-field modeling of the non-congruent crystallization of a ternary Ge-Sb-Te alloy for phase-change memory applications

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