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首页> 外文期刊>Journal of Applied Physics >Effect of surface treatments on ALD Al_2O_3/4H-SiC metal-oxide-semiconductor field-effect transistors
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Effect of surface treatments on ALD Al_2O_3/4H-SiC metal-oxide-semiconductor field-effect transistors

机译：表面处理对ALD AL_2O_3 / 4H-SIC金属氧化物半导体场效应晶体管的影响

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摘要

Silicon carbide (4H) based metal-oxide-semiconductor field-effect transistors provide capabilities in high power and high temperature inaccessible to silicon. However, the performance of thermally grown oxide-based devices remains limited by oxide/semiconductor interface defects. This research employs deposited dielectrics, Al_2O_3, rather than thermal oxidation. Investigation of various pre-deposition processes reveals different degrees of improvements in the electronic properties. An optimum structure employs the preparation of a nitrided surface via NO annealing, a process known to passivate surface defects, a hydrogen exposure, followed by Al_2O_3 deposition. Inversion layer field-effect mobilities as high as 52 crrr/V s are reported in the optimum structures. Capacitance-voltage measurements and field-effect mobility characteristics indicate a trapping limited conductivity in Al_2O_3/4H-SiC inversion channels similar to SiO_2/4H-SiC. Leakage currents and interface breakdown are also reported for various Al_2O_3/4H-SiC MOS structures.
机译：基于碳化硅（4H）的金属氧化物 - 半导体场效应晶体管为硅提供高功率和高温的能力。然而，热生长的基于氧化物的装置的性能仍然受到氧化物/半导体界面缺陷的限制。该研究采用沉积的电介质，Al_2O_3而不是热氧化。对各种预沉积过程的研究揭示了电子特性的不同程度。优化结构通过不通过退火制备氮化表面，该方法钝化表面缺陷，氢暴露，然后是Al_2O_3沉积。在最佳结构中报告了高达52CRRR / V S高达52 CRRR / V S的反转层场效应次数。电容 - 电压测量和现场效应移动特性表示类似于SIO_2 / 4H-SIC的AL_2O_3 / 4H-SIC反转通道中的捕获有限的电导率。还报告了各种AL_2O_3 / 4H-SIC MOS结构报告了漏电流和界面故障。

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  • 来源
    《Journal of Applied Physics》 |2021年第7期|075702.1-075702.6|共6页
  • 作者

    I. U. Jayawardhena; R. P. Ramamurthy; D. Morisette; A. C. Ahyi; R. Thorpe; M. A. Kuroda; L. C. Feldman; S. Dhar;

  • 作者单位

    Department of Physics Auburn University Auburn Alabama 36849 USA;

    School of Electrical and Computer Engineering Purdue University West Lafayette Indiana 47907 USA;

    School of Electrical and Computer Engineering Purdue University West Lafayette Indiana 47907 USA;

    Department of Physics Auburn University Auburn Alabama 36849 USA;

    Department of Physics and Astronomy and Department of Materials Science & Engineering Rutgers University Piscataway New Jersey 08854 USA;

    Department of Physics Auburn University Auburn Alabama 36849 USA;

    Department of Physics and Astronomy and Department of Materials Science & Engineering Rutgers University Piscataway New Jersey 08854 USA;

    Department of Physics Auburn University Auburn Alabama 36849 USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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