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Mechanism of highly sensitive strain response in antiferromagnetic chromium

机译：反铁磁铬高敏感应变响应的机制

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摘要

We studied a possible mechanism for the highly sensitive response of electrical resistivity to strain in metal Cr by means of theoretical calculation and experimental measurement. First-principles calculations based on density functional theory were performed for antiferromagnetic Cr in the spin-density wave (SDW) state. The calculation succeeded to reproduce a significant magnetovolume effect by hydrostatic pressure observed in Cr, and the obtained result revealed that the electronic structure and magnetic properties in the SDW state are sensitive to uniaxial strain. The magnetic moment of Cr changed more than 5% with a strain of 1%. We estimated the gauge factor (GF), which denotes the sensitivity of resistance to strain, from the local density of states. The obtained GF value of Cr in the SDW state was found to be approximately 10, whereas that of Cr in the nonmagnetic state, Fe in the ferromagnetic state, and V in the nonmagnetic state was around 1. This result was consistent with our experimental measurement of the GF of Cr, Fe, and V thin films. We found that the large GF is related to a significant magnetovolume effect in Cr. The volume variation accompanying uniaxial strain influences both the magnetic state and electrical conduction of Cr through sensitive changes of the electronic structure in the SDW state.
机译：我们通过理论计算和实验测量研究了电阻率对金属CR菌株的高敏感响应的可能机制。基于密度泛函理论的第一原理计算用于旋转密度波（SDW）状态下的反铁磁CR。该计算成功地通过在Cr中观察到的静水压力来再现显着的磁体效果，所得到的结果显示，SDW状态中的电子结构和磁性对单轴应变敏感。 CR的磁矩变为5％以上，应变为1％。我们估计了仪表因子（GF），其表示抵抗力的抗性，来自局部密度。发现SDW状态下的Cr的GF值为约10，而非磁性状态下的Cr的Cr在铁磁性状态下，并且在非磁性状态下的v在1.此结果与我们的实验测量一致Cr，Fe和V薄膜的GF。我们发现大GF与Cr中的显着磁体效应有关。伴随单轴应变的体积变化通过SDW状态的电子结构的敏感变化影响CR的磁状态和电导。

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  • 来源
    《Journal of Applied Physics》 |2021年第20期|203901.1-203901.7|共7页
  • 作者

    Yohei Kota; Eiji Niwa; Masayuki Naoe;

  • 作者单位

    National Institute of Technology (KOSEN) Fukushima College Iwaki Fukushima 970-8034 Japan;

    Research Institute for Electromagnetic Materials (DENJIKEN) Tomiya Miyagi 981-3341 Japan;

    Research Institute for Electromagnetic Materials (DENJIKEN) Tomiya Miyagi 981-3341 Japan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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