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首页> 外文期刊>Journal of Applied Physics >The structural and in-plane dielectric/ferroelectric properties of the epitaxial (Ba, Sr)(Zr, Ti)O3 thin films
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The structural and in-plane dielectric/ferroelectric properties of the epitaxial (Ba, Sr)(Zr, Ti)O3 thin films

机译:外延(Ba,Sr)(Zr,Ti)O3薄膜的结构和面内介电/铁电性质

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摘要

Epitaxial (Ba1-xSrx)(Zr0.1Ti0.9)O3 (BSZT, x = 0 – 0.45) thin films were deposited on (LaAlO3)0.3(Sr2AlTaO6)0.35 (LSAT) substrates by pulsed laser deposition. The experimental results demonstrate that the structural, dielectric, and ferroelectric properties of the BSZT thin films were greatly dependent on the strontium content. The BSZT thin films transformed from tetragonal to cubic phase when x ≥ 0.35 at room temperature. The Curie temperature and room-temperature remnant polarization decrease with increasing strontium concentration. The optimal dielectric properties were found in (Ba0.55Sr0.45)(Zr0.1Ti0.9)O3 thin films which is in paraelectric state, having tunability of 47% and loss tangent of 0.0338 under an electric field of 20 MV/m at 1 MHz. This suggests that BSZT thin film is a promising candidate for tunable microwave device applications.
机译:通过脉冲激光沉积在(LaAlO3)0.3(Sr2AlTaO6)0.35(LSAT)衬底上沉积外延(Ba1-xSrx)(Zr0.1Ti0.9)O3(BSZT,x = 0 – 0.45)薄膜。实验结果表明,BSZT薄膜的结构,介电和铁电性能很大程度上取决于锶的含量。当室温下x≥0.35时,BSZT薄膜从四方相转变为立方相。居里温度和室温剩余极化随着锶浓度的增加而降低。在(Ba0.55Sr0.45)(Zr0.1Ti0.9)O3薄膜中发现了最佳介电性能,该薄膜处于顺电状态,在20 MV / m的电场下具有47%的可调性和0.0338的损耗角正切1 MHz。这表明BSZT薄膜是可调谐微波器件应用的有希望的候选者。

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  • 来源
    《Journal of Applied Physics》 |2014年第23期|1-7|共7页
  • 作者单位

    Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, China|c|;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
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