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首页> 外文期刊>Journal of Applied Physics >Device modeling of perovskite solar cells based on structural similarity with thin film inorganic semiconductor solar cells
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Device modeling of perovskite solar cells based on structural similarity with thin film inorganic semiconductor solar cells

机译：基于与薄膜无机半导体太阳能电池结构相似性的钙钛矿太阳能电池器件建模

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摘要

Device modeling of CH3NH3PbI3−xCl3 perovskite-based solar cells was performed. The perovskite solar cells employ a similar structure with inorganic semiconductor solar cells, such as Cu(In,Ga)Se2, and the exciton in the perovskite is Wannier-type. We, therefore, applied one-dimensional device simulator widely used in the Cu(In,Ga)Se2 solar cells. A high open-circuit voltage of 1.0 V reported experimentally was successfully reproduced in the simulation, and also other solar cell parameters well consistent with real devices were obtained. In addition, the effect of carrier diffusion length of the absorber and interface defect densities at front and back sides and the optimum thickness of the absorber were analyzed. The results revealed that the diffusion length experimentally reported is long enough for high efficiency, and the defect density at the front interface is critical for high efficiency. Also, the optimum absorber thickness well consistent with the thickness range of real devices was derived.
机译：CH 3 NH 3 PbI 3- x Cl 3 钙钛矿的设备建模基于太阳能的电池被执行。钙钛矿太阳能电池的结构与无机半导体太阳能电池（例如Cu（In，Ga）Se 2 ）相似，钙钛矿中的激子为Wannier型。因此，我们应用了在Cu（In，Ga）Se 2 太阳能电池中广泛使用的一维设备模拟器。在模拟中成功再现了实验报告的1.0 V的高开路电压，并且还获得了与实际器件完全一致的其他太阳能电池参数。另外，分析了吸收体的载流子扩散长度和正面和背面的界面缺陷密度以及吸收体的最佳厚度的影响。结果表明，实验报道的扩散长度足够长以实现高效率，并且前界面处的缺陷密度对于高效率至关重要。并推导了与实际器件厚度范围相吻合的最佳吸收体厚度。

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  • 来源
    《Journal of Applied Physics》 |2014年第5期|1-6|共6页
  • 作者

    Minemoto Takashi; Murata Masashi;

  • 作者单位

    Department of Electrical and Electronic Engineering, Ritsumeikan University, 1-1-1 Nojihigashi, Kusatsu, Shiga 525-8577, Japan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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