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Raman spectra and electron-phonon coupling in disordered graphene with gate-tunable doping

机译：栅极可调掺杂的无序石墨烯的拉曼光谱和电子-声子耦合

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摘要

We report a Raman spectroscopy study of graphene field-effect transistors with a controlled amount of defects introduced in graphene by exposure to electron-beam irradiation. Raman spectra are taken at T = 8 K over a range of back gate voltages (V) for various irradiation dosages (R). We study effects in the Raman spectra due to V-induced doping and artificially created disorder at various R. With moderate disorder (irradiation), the Raman G peak with respect to the graphene carrier density (n) exhibits a minimum in peak frequency and a maximum in peak width near the charge-neutral point (CNP). These trends are similar to those seen in previous works on pristine graphene and have been attributed to a reduction of electron-phonon coupling strength (D) and removal of the Kohn anomaly as the Fermi level moves away from the CNP. We also observe a maximum in I/I and weak maximum in I/I near the CNP. All the observed dependences of Raman parameters on n weaken at stronger disorder (higher R), implying that disorder causes a reduction of D as well. Our findings are valuable for understanding Raman spectra and electron-phonon physics in doped and disordered graphene.
机译：我们报告了石墨烯场效应晶体管的拉曼光谱研究，该石墨烯场效应晶体管具有通过暴露于电子束辐照而在石墨烯中引入受控数量的缺陷的能力。在各种辐射剂量（R）的背栅电压（V）范围内，以T = 8 K拍摄拉曼光谱。我们研究了在不同的R下由于V诱导的掺杂和人为造成的无序对拉曼光谱的影响。在中等无序（辐照）的情况下，相对于石墨烯载流子密度（n）的拉曼G峰的峰频率最小，且电荷中性点（CNP）附近的最大峰宽。这些趋势类似于先前在原始石墨烯上的工作所看到的趋势，并且归因于随着费米能级从CNP移开，电子-声子耦合强度（D）降低以及Kohn异常的消除。我们还观察到在CNP附近I / I的最大值和I / I的弱最大值。所有观察到的拉曼参数对n的依赖性在较强的无序性（较高的R）下都会减弱，这意味着该无序性也会导致D的降低。我们的发现对于理解掺杂和无序石墨烯中的拉曼光谱和电子声子物理学是有价值的。

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  • 来源
    《Journal of Applied Physics》 |2014年第23期|1-7|共7页
  • 作者

    Childres Isaac; Jauregui Luis A.; Chen Yong P.;

  • 作者单位

    Department of Physics, Purdue University, West Lafayette, Indiana 47907, USA;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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