...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Journal of Applied Physics >Effect of intravalley acoustic phonon scattering on quantum transport in multigate silicon nanowire metal-oxide-semiconductor field-effect transistors
【24h】

Effect of intravalley acoustic phonon scattering on quantum transport in multigate silicon nanowire metal-oxide-semiconductor field-effect transistors

机译：谷内声子声子散射对多栅极硅纳米线金属氧化物半导体场效应晶体管中量子输运的影响

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

In this paper we investigate the effects of intravalley acoustic phonon scattering on the quantum transport and on the electrical characteristics of multigate silicon nanowire metal-oxide-semiconductor field-effect transistors. We show that acoustic phonons cause a shift and broadening of the local DOS in the nanowire, which modifies the electrical characteristics of the device. The influence of scattering on off-state and on-state currents is investigated for different values of channel length. In the ballistic transport regime, source-to-drain tunneling current is predominant, whereas in the presence of acoustic phonons, diffusion becomes the dominant current transport mechanism. A three-dimensional quantum mechanical device simulator based on the nonequilibrium Green’s function formalism in uncoupled-mode space has been developed to extract device parameters in the presence of electron–phonon interactions. Electron–phonon scattering is accounted for by adopting the self-consistent Born approximation and using the deformation potential theory.
机译：在本文中，我们研究了谷内声子散射对量子传输和多栅极硅纳米线金属氧化物半导体场效应晶体管电学特性的影响。我们表明，声子会引起纳米线中局部DOS的偏移和变宽，从而改变设备的电气特性。对于不同的沟道长度值，研究了散射对截止状态和导通状态电流的影响。在弹道运输制度中，源-漏隧穿电流占主导，而在存在声子的情况下，扩散成为主要的电流运输机制。已经开发出了一种基于非耦合格林空间中非平衡格林函数形式主义的三维量子力学设备模拟器，用于在存在电子-声子相互作用的情况下提取设备参数。电子-声子散射是通过采用自洽Born近似并使用形变势理论来解决的。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号