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首页> 外文期刊>Journal of Applied Physics >Chemical vapor deposition and characterization of phosphorus nitride (P3N5) gate insulators for InP metal‐insulator‐semiconductor devices
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Chemical vapor deposition and characterization of phosphorus nitride (P3N5) gate insulators for InP metal‐insulator‐semiconductor devices

机译：InP金属-绝缘体-半导体器件的氮化磷（P3N5）栅极绝缘体的化学气相沉积和表征

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摘要

A new gate insulating film consisting of P3N5 was formed on an InP surface by a new chemical vapor deposition (CVD) technique. A suitable combination of reagents (PH3 and NH3) made P3N5 CVD feasible in an ambient free from oxygen and having excess phosphorus pressure. The new insulator revealed ohmic conduction with a resistivity as high as 104Ω cm. The breakdown field intensity increased up to 107V/cm at room temperature. The low frequency dielectric constant was 3.7 ϵ0. A very minor hysteresis was seen in the capacitance‐voltage curves measured on P3N5‐ InP metal‐insulator‐semiconductor diode. The interface state density was reduced to 1012/cm2eV at an energy near the conduction band edge. Photoluminescence spectra were measured before and after CVD to determine the surface passivation effect.
机译：通过新的化学气相沉积（CVD）技术在InP表面上形成了由P3N5组成的新的栅绝缘膜。合适的试剂组合（PH3和NH3）使P3N5 CVD在无氧且磷压过高的环境中可行。新的绝缘体显示出欧姆传导，其电阻率高达104Ωcm。室温下击穿电场强度增加到107V / cm。低频介电常数为3.7ϵ0。在P3N5-InP金属-绝缘体-半导体二极管上测得的电容-电压曲线中看到很小的磁滞现象。在导带边缘附近的能量处，界面态密度降低到1012 / cm2eV。在CVD之前和之后测量光致发光光谱以确定表面钝化效果。

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    《Journal of Applied Physics》 |1982年第7期|P.5037-5043|共7页
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  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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