Steric origin of the silicon‐oxygen‐silicon angle distribution in silica

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Steric origin of the silicon‐oxygen‐silicon angle distribution in silica

机译：二氧化硅中硅-氧-硅角分布的立体起源

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The oxygen‐oxygen separation distance between adjacent tetrahedra in silica has been considered as a restrictive criterion for the formation of accepted structures. The single stipulation of a minimum O‐O separation of say 2.9 Å leads to a distribution of the Si‐O‐Si angle with a maximum at about 145° and cutoffs near 120° on the low end and 180° on the high end of the scale, all in excellent agreement with the experimental observations for silica. No detailed energetic considerations are involved.

机译：二氧化硅中相邻四面体之间的氧-氧分离距离已被视为形成可接受结构的限制性标准。 O-O最小间隔（例如2.9Å）的单一规定导致Si-O-Si角的分布最大，约为145°，并且在低端的截止点接近120°，在高端的截止点接近180°。规模，都与二氧化硅的实验观察非常吻合。没有涉及详细的精力充沛的考虑。

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《Journal of Applied Physics》 |1982年第12期|P.8615-8619|共5页
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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Steric origin of the silicon‐oxygen‐silicon angle distribution in silica

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