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Growth ‘‘kinetics’’ and growth mechanisms for disilicide layers obtained through implantation

机译:通过植入获得的二硅化物层的生长“动力学”和生长机理

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Layers of NbSi2 and MoSi2 were grown by means of the implantation of germanium and arsenic ions through films of the respective metals, previously deposited on single crystal silicon substrates. The doses used varied from 1 to 15×1015 ions/cm2 with energies of 150, 200, and 250 keV. The thickness of the silicide layers increases in proportion to the square root of the implanted doses. This observation and other evidence indicate that the process is dominated by the atomic mechanisms encountered in radiation‐enhanced diffusion, whereas ballistic mixing effects remain unimportant. The growth of disilicide layers during implantation is discussed with respect to (1) what is known about the growth of these disilicide layers during simple annealing, and (2) what is anticipated for diffusion‐controlled solid state processes.
机译:NbSi2和MoSi2层是通过将锗和砷离子注入预先沉积在单晶硅衬底上的各个金属膜中而生长的。所用剂量从1到15×1015离子/ cm2不等,能量分别为150、200和250 keV。硅化物层的厚度与注入剂量的平方根成比例地增加。该观察结果和其他证据表明,该过程受辐射增强扩散中遇到的原子机制的支配,而弹道混合效应仍然不重要。关于植入期间二硅化物层的生长,将针对以下方面进行讨论:(1)关于简单退火期间这些二硅化物层的生长的已知信息,以及(2)扩散控制的固态过程的预期。

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    《Journal of Applied Physics》 |1982年第12期|P.8765-8770|共6页
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  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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