Vapor pressure dependence of native defect concentrations in GaP

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Vapor pressure dependence of native defect concentrations in GaP

机译：GaP中天然缺陷浓度的蒸气压依赖性

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Native defect concentrations in GaP were calculated under solid‐vapor equilibrium conditions to explain the annealing effects. Total number of native defects at a fixed temperature was minimized at a certain phosphorus pressure. This pressure is consistent with the optimum pressure reported in annealing experiments.

机译：在固-汽平衡条件下计算了GaP中的天然缺陷浓度，以解释退火效应。在一定的磷压下，固定温度下的自然缺陷总数得以最小化。该压力与退火实验中报告的最佳压力一致。

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《Journal of Applied Physics》 |1982年第12期|P.9208-9209|共2页
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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Vapor pressure dependence of native defect concentrations in GaP

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