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首页> 外文期刊>Journal of Crystal Growth >Defect formation in GaAs grown by organometallic vapor phase epitaxy and the structure of the native defect EL2
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Defect formation in GaAs grown by organometallic vapor phase epitaxy and the structure of the native defect EL2

机译：通过有机金属气相外延生长的GaAs中的缺陷形成和天然缺陷EL2的结构

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摘要

Existing data describing the dependence of the concentrations of the defects S_As, Zn_Ga, Si_Ga, and El2 in GaAs grown by organometallic vapor phase epitaxy on the partial pressures of arsine (p_As) and the dopant-containing gases in the input gas stream are analyzed using a simple model. It is found that (1) As_4 is the dominant species of As in the vapor in equilibrium with the solid at the growth interface, (2) the electron concentration governing the charge state of the defect being formed is proportional to p~3/4 _As independent of the dopant concentration, (3) the Fermi level during the defect formation process lies above the ionization levels of deep donors but below that of shallow donors, and (4) the atomic structure of the mid-gap electron trap, EL2, is stoichiometrically equivalent tot he arsenic antisite, As_Ga.
机译：现有数据描述了通过有机金属气相外延生长的砷化镓中缺陷S_As，Zn_Ga，Si_Ga和El2的浓度对砷化氢（p_As）和输入气流中含掺杂物的分压的依赖性的分析方法一个简单的模型。发现（1）As_4是与生长界面处的固体处于平衡状态的蒸气中As的主要种类，（2）控制所形成缺陷的电荷状态的电子浓度与p〜3/4成正比_（3）与缺陷浓度无关，（3）缺陷形成过程中的费米能级高于深施主的电离能级，但低于浅施主的电离能级；（4）中带隙电子陷阱EL2的原子结构，在化学计量上等同于砷抗位As_Ga。

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