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首页> 外文期刊>Journal of Applied Physics >The mechanism of the enhancement in divacancy production by oxgyen during electron irradiation of silicon. I. Experimental
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The mechanism of the enhancement in divacancy production by oxgyen during electron irradiation of silicon. I. Experimental

机译:氧在硅电子辐照过程中提高空位产生的机理。一,实验

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Czochralski silicon samples containing different amounts of interstitial oxygen were irradiated with 2‐MeV electrons at room temperature to a fixed dose of 1.0×1018 electrons/cm2. Prior to irradiation the interstitial oxygen content of similar specimens had been varied in a controlled way by precipitating different amounts of the dispersed oxygen by suitable heat treatments. The introduced divacancy density correlates linearly to the concentration of the interstitial oxygen. A certain concentration of divacancies is always introduced, independent of the amount of interstitial oxygen present. Our data show that the divacancy concentration correlates much better to the density of introduced vacancy‐oxygen complexes than to the initially present dissolved oxygen concentration. Different models for the oxygen enhancement of divacancy production are discussed.
机译:在室温下,用2-MeV电子辐照含有不同数量间隙氧的Czochralski硅样品,以1.0×1018电子/ cm2的固定剂量照射。辐照之前,通过适当的热处理使不同数量的分散氧沉淀,可以控制地改变相似试样的间隙氧含量。引入的空位密度与组织氧的浓度线性相关。总是引入一定浓度的空位,与间隙氧的存在量无关。我们的数据表明,空位浓度与引入的空位-氧配合物的密度的相关性要好于最初存在的溶解氧浓度。讨论了增加空位产生的氧气的不同模型。

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    《Journal of Applied Physics》 |1982年第12期|P.8686-8690|共5页
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  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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