Diffusion length of minority carrier in n‐type semiconductors: A photoelectrochemical determination in aqueous solvents

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Diffusion length of minority carrier in n‐type semiconductors: A photoelectrochemical determination in aqueous solvents

机译：n型半导体中少数载流子的扩散长度：水性溶剂中的光电化学测定

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Photoelectrochemical measurements with aqueous electrolyte‐semiconductor junctions under monochromatic illumination for five n‐type semiconductor compounds are presented: ZnSe, CdSe, CdTe (II‐VI) and GaP, InP (III‐V). The Schottky behavior of these junctions is demonstrated in the dark and under illumination. Only if conditions such as surface preparation, proper band bending, and doping level as well as energy of incident photons are achieved, the photocurrent versus potential characteristics are described using Gärtner’s equation. Values of the diffusion length L of holes are determined by an extrapolation and a fitting method. They depend on the particular properties of the samples, particularly the concentration of free electrons. Results obtained are: ZnSe (7×1017 cm-3) L=0.025 μm; CdSe (2.5×1018 cm-3) L=0.124 μm; CdTe (8.5×1017 cm-3) L=0.14 μm; GaP (4×1016 cm-3) L=0.24 μm; InP (3×1017 cm-3) L=0.15 μm.

机译：提出了在单色照明下使用水性电解质-半导体结对五个n型半导体化合物进行的光电化学测量：ZnSe，CdSe，CdTe（II-VI）和GaP，InP（III-V）。这些结的肖特基行为在黑暗和光照下得到证明。只有达到了诸如表面处理，适当的能带弯曲，掺杂水平以及入射光子能量之类的条件时，才可以使用Gärtner方程描述光电流与电势的关系。孔的扩散长度L的值通过外推法和拟合法确定。它们取决于样品的特殊性质，特别是自由电子的浓度。获得的结果是：ZnSe（7×1017 cm-3）L = 0.025μm； CdSe（2.5×1018 cm-3）L = 0.124μm; CdTe（8.5×1017 cm-3）L = 0.14μm; GaP（4×1016 cm-3）L = 0.24微米; InP（3×1017 cm-3）L = 0.15微米

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《Journal of Applied Physics》 |1982年第12期|P.8867-8873|共7页
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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机译：用改进的测量少数载流子扩散长度的方法测定40-mev质子对半导体的影响

Diffusion length of minority carrier in n‐type semiconductors: A photoelectrochemical determination in aqueous solvents

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