Solar‐cell characteristics and interfacial chemistry of indium‐tin‐oxide/indium phosphide and indium‐tin‐oxide/gallium arsenide junctions

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Solar‐cell characteristics and interfacial chemistry of indium‐tin‐oxide/indium phosphide and indium‐tin‐oxide/gallium arsenide junctions

机译：氧化铟锡/磷化铟和氧化铟锡/砷化镓结的太阳能电池特性和界面化学

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The preparation of indium‐tin‐oxide (ITO)/p‐InP and ITO/p‐GaAs solar cells via ion‐beam deposition, rf sputtering, and magnetron sputtering of ITO onto single‐crystal InP and GaAs substrates is described. The properties of these solar cells are strongly affected by the fabrication conditions and are related to chemical modifications of the junctions. The solar power conversion efficiencies at air mass 2 of ITO/p‐GaAs and ITO/p‐InP solar cells are ?5 and ?14.4%, respectively.

机译：描述了通过在单晶InP和GaAs衬底上进行离子束沉积，射频溅射和磁控溅射ITO制备铟锡氧化物（ITO）/ p-InP和ITO / p-GaAs太阳能电池。这些太阳能电池的性能受制造条件的强烈影响，并且与结的化学修饰有关。 ITO / p-GaAs和ITO / p-InP太阳能电池在空气质量2下的太阳能转换效率分别为？5和？14.4％。

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《Journal of Applied Physics》 |1979年第5期|P.3441-3446|共6页
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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2. Electron Transport Layer-Free Inverted Organic Solar Cells Fabricated with Highly Transparent Low-Resistance Indium Gallium Zinc Oxide/Ag/Indium Gallium Zinc Oxide Multilayer Electrode [J] . Kim Jun Ho, Kwon Sung-Nam, Na Seok-In, Journal of Electronic Materials . 2017,第4期

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机译：基于磷化铟氧化物，磷化铟，砷化铟镓镓和锑化铟镓镓的光伏电池效率的提高
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8. Junction Characteristics of Indium Tin Oxide/Indium Phosphide Solar Cells [R] . Sheldon, P., Ahrenkiel, R. K., Hayes, R. E., 1982

机译：铟锡氧化物/磷化铟太阳电池的结特性

Solar‐cell characteristics and interfacial chemistry of indium‐tin‐oxide/indium phosphide and indium‐tin‐oxide/gallium arsenide junctions

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