Some electrical and optical properties of ferroelectric lead‐zirconate–lead‐titanate thin films

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Some electrical and optical properties of ferroelectric lead‐zirconate–lead‐titanate thin films

机译：铁电锆酸铅钛酸铅薄膜的电学和光学性质

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Ferroelectric and transparent thin films of lead‐zirconate–lead‐titanate (PZT) were fabricated by rf diode sputtering. The substrates used were platinum, fused quartz, and In2O3‐coated fused quartz, but no substantial difference on the film properties was observed. Films deposited at substrate temperatures below 300 °C were amorphous. At substrate temperatures of 350–450 °C the films crystallized in a pyrochlore structure. Films deposited at above 500 °C showed a perovskite structure and ferroelectric properties. The measured dielectric constant of the ferroelectric PZT was 751. Spontaneous polarization of the film was 26.1 μC/cm2 and the Curie temperature was 325 °C. The coercive field and remanent polarization were found to be 23.3 kV/cm and 20.4 μC/cm2, respectively. The refractive index of the perovskite PZT film was 2.36 at 6328 Å, and the absorption edge was found to be at 2950 Å. The edge of the pyrochlore film was at 3300 Å. Optical waveguiding properties of the PZT thin film were investigated at 6328 Å, but attenuation was impracticably large.

机译：用射频二极管溅射法制备了锆酸铅钛酸铅（PZT）的铁电透明薄膜。所使用的基材为铂，熔融石英和In2O3涂层熔融石英，但未观察到膜性能的显着差异。在低于300°C的基板温度下沉积的薄膜是非晶态的。在350–450 C的底物温度下，薄膜以烧绿石结构结晶。在高于500°C的温度下沉积的薄膜显示出钙钛矿结构和铁电特性。铁电PZT的介电常数为751。膜的自发极化为26.1μC/ cm2，居里温度为325ieC。矫顽场和剩余极化分别为23.3 kV / cm和20.4μC/ cm2。钙钛矿PZT膜的折射率在6328Å为2.36，吸收边缘在2950Å。烧绿石薄膜的边缘为3300。研究了PZT薄膜在6328Å处的光波导特性，但衰减却实在太大。

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《Journal of Applied Physics》 |1977年第7期|P.2905-2909|共5页
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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3. Publisher's Note: Retraction of 'Nonlinear Optical Properties of the Lanthanum-Modified Lead Zirconate Titanate Ferroelectric Thin Films Using Z-Scan Technique' [Jpn. J. Appl. Phys. 46 (2007) L7] [J] . Japanese journal of applied physics . 2008,第8issue1期

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4. Electrical and reliability characteristics of lead-zirconate-titanate (PZT) ferroelectric thin films for DRAM applications [C] . Carrano, J., Sudhama, . 1989

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Some electrical and optical properties of ferroelectric lead‐zirconate–lead‐titanate thin films

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