Thermal oxidation of silicon in various oxygen partial pressures diluted by nitrogen

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Thermal oxidation of silicon in various oxygen partial pressures diluted by nitrogen

机译：氮气稀释的各种氧分压下的硅的热氧化

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Oxide growth kinetics of SiO2 films grown on silicon at 950 to 1100 °C in an O2/N2 mixture is empirically studied. It is found that a linear‐parabolic law is in excellent agreement with the oxidation data under the oxygen partial pressure PO2 of 1 or 10-1 atm. However, a parabolic law is obtained at 10-2 atm, and an inverse‐logarithmic law at 10-3 atm. The Mott‐Cabrera oxidation rate equation is adapted to the thermal oxidation of silicon in the case of PO2≲10-2 atm. Finally, 43.9 kcal/mole is derived as the activation energy value of silicon atoms entering into the oxide.

机译：实验研究了在O2 / N2混合物中在950至1100 C的温度下在硅上生长的SiO2膜的氧化物生长动力学。发现线性抛物线定律与氧分压PO2为1或10-1 atm时的氧化数据非常吻合。但是，抛物线定律在10-2 atm处获得，反对数律在10-3 atm处获得。在PO2≲10-2atm的情况下，Mott-Cabrera氧化速率方程适用于硅的热氧化。最后，得出43.9 kcal / mole作为进入氧化物的硅原子的活化能值。

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《Journal of Applied Physics》 |1977年第7期|P.2891-2896|共6页
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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Thermal oxidation of silicon in various oxygen partial pressures diluted by nitrogen

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