Half‐width and peak‐intensity measurement of a rocking curve obtained from silicon on sapphire using soft x‐ray beams

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Half‐width and peak‐intensity measurement of a rocking curve obtained from silicon on sapphire using soft x‐ray beams

机译：使用软X射线束测量从蓝宝石上的硅获得的摇摆曲线的半角和峰强度

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The crystalline quality of a silicon film on a sapphire substrate (SOS) is investigated by measuring both a half‐width and a peak intensity of a rocking curve using a double‐crystal arrangement. Contrary to conventional techniques, it is confirmed that an asymmetric diffraction technique using a soft x‐ray beam (TiKα1) enables the sampling of only a surface layer within 0.12 μm. The improved technique is successfully applied to SOS wafers. As a result, the half‐width is found to correlate with both a fault density and a Hall mobility. On the other hand, the intensity has a correlation with an interstitial Al content in the film which is introduced by autodoping during growth.

机译：通过使用双晶排列测量摇摆曲线的半峰和峰强度，研究了蓝宝石衬底（SOS）上硅膜的晶体质量。与传统技术相反，已确认使用软X射线束（TiKα1）的非对称衍射技术仅能对0.12μm范围内的表面层进行采样。改进的技术已成功应用于SOS晶圆。结果，发现半宽度与故障密度和霍尔迁移率都相关。另一方面，强度与在生长期间通过自动掺杂引入的膜中的间隙Al含量具有相关性。

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《Journal of Applied Physics》 |1977年第7期|P.3138-3140|共3页
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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Half‐width and peak‐intensity measurement of a rocking curve obtained from silicon on sapphire using soft x‐ray beams

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