Negative Resistance in Chromium‐Doped GaAs p‐i‐n Diodes

Selway P. R.; Nicolle Wendy M.

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Negative Resistance in Chromium‐Doped GaAs p‐i‐n Diodes

机译：掺铬GaAs p-i-n二极管的负电阻

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Gallium arsenide p‐i‐n diodes, made by diffusing chromium and zinc into n‐type material, exhibit a stable current‐controlled negative resistance at room temperature and emit recombination radiation when biased in the forward direction. The current‐voltage characteristics have been measured and analysis of the results shows that the negative resistance arises as a result of the emission of light at the p‐i junction, this light being reabsorbed in the semi‐insulating region and causing a photoconductive effect. The electron lifetime in the chromium‐diffused semi‐insulating region is estimated to be about 10-8–10-7 sec and diodes with a suitable zinc diffusion have an internal efficiency for light emission of about 0.1 photons per electron.

机译：通过将铬和锌扩散到n型材料中而制成的砷化镓p-i-n二极管在室温下表现出稳定的电流控制负电阻，并且在正向偏置时会发出复合辐射。测量了电流-电压特性，对结果的分析表明，由于在p-i结处发射光而产生了负电阻，该光在半绝缘区内被重新吸收并产生光电导效应。估计在铬扩散的半绝缘区域中的电子寿命约为10-8–10-7秒，并且具有适当锌扩散的二极管的内部效率为每个电子发光约0.1个光子。

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《Journal of Applied Physics》 |1969年第10期|共8页
作者
Selway P. R.; Nicolle Wendy M.;
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Standard Telecommunication Laboratories Ltd., Harlow, Essex, England;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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正文语种 eng
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Negative Resistance in Chromium‐Doped GaAs p‐i‐n Diodes

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