Electron Diffraction Studies of the Epitaxy of Cu Single Crystals. II. Early Stages of Epitaxy and Interfacial Dislocation Networks

Krause G. O.

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Electron Diffraction Studies of the Epitaxy of Cu Single Crystals. II. Early Stages of Epitaxy and Interfacial Dislocation Networks

机译：Cu单晶外延的电子衍射研究。二。外延和界面错位网络的早期阶段

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The first stages of epitaxy were investigated with reflection HEED methods for continuous Cu, Cu2O, and Ag films on Cu single‐crystal substrates. A new kind of diffraction pattern was obtained from the Cu{111} planes. It is produced by networks of interfacial dislocations. In case of the Cu layers, hexagonal arrangements of screw dislocations are formed in a pure twist boundary. The corresponding Burgers vectors are of the type ½〈110〉. For the Cu2O and Ag films, hexagonal and rhombohedric networks, respectively, of interfacial edge dislocations with Burgers vectors ⅙〈112〉 are probably present. The dislocation densities and modifications in the film lattice constants for the latter two epitaxial systems are in good agreement with values predicted by the theory of interfacial dislocations.

机译：通过反射HEED方法研究了外延的第一阶段，该方法用于在Cu单晶衬底上连续形成Cu，Cu2O和Ag膜。从Cu {111}面获得了一种新型的衍射图。它是由界面错位网络产生的。在Cu层的情况下，在纯扭曲边界中形成了螺钉位错的六边形排列。相应的Burgers向量的类型为½〈110〉。对于Cu2O和Ag薄膜，可能存在分别带有Burgers向量⅙〈112〉的界面边缘位错的六边形和菱形网络。后两个外延系统的位错密度和薄膜晶格常数的变化与界面位错理论预测的值非常吻合。

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《Journal of Applied Physics》 |1966年第10期|共7页
作者
Krause G. O.;
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Metallurgical Research Laboratories, Syracuse University, Syracuse, New York;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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1. Electron Diffraction Studies of the Epitaxy of Cu Single Crystals. I. Epitaxy of Evaporated Cu Films on Cu Crystals [J] . Krause G. O. Journal of Applied Physics . 1966,第10期

机译：Cu单晶外延的电子衍射研究。 I.铜晶体上蒸发的铜膜的外延
2. Work Hardening and Dislocation Arrangement of fcc Single Crystals. II. Electron Microscope Transmission Studies of NiCo Single Crystals and Relation to Work‐Hardening Theory [J] . Mader Siegfried, Seeger Alfred, Thieringer Hansamp Journal of Applied Physics . 1963,第11期

机译：fcc单晶的工作硬化和位错排列。二。 NiCo单晶的电子显微镜透射研究及其与工作硬化理论的关系
3. Electron diffraction study of the epitaxy of Cu2O on the (001) face of copper [J] . Journal of Applied Physics . 1975,第4期

机译：铜（001）面上Cu2O外延的电子衍射研究
4. Influence of Growth Conditions and Substrate Properties on Formation of Interfacial Dislocations and Dislocation Half-loop Arrays in 4H-SiC(0001) and (000-1) Epitaxy [C] . Hidekazu Tsuchida, Isaho Kamata, Kazutoshi Kojima, 2008 MRS spring meeting symposium proceedings . 2008

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5. Reflection high-energy electron diffraction during molecular-beam epitaxy. [D] . van der Wagt, Jan Paul Antoni. 1995

机译：分子束外延过程中的反射高能电子衍射。
6. Electron nuclear double resonance spectroscopy of a hen egg-white lysozyme--Cu2+ complex in tetragonal single crystals. [O] . C A Hutchison Jr, D J Singel 1981

机译：四方单晶中鸡蛋清溶菌酶-Cu2 +配合物的电子核双共振光谱。
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Electron Diffraction Studies of the Epitaxy of Cu Single Crystals. II. Early Stages of Epitaxy and Interfacial Dislocation Networks

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