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首页> 外文期刊>Journal of Computational Electronics >Kinetic Monte Carlo simulation of transport in amorphous silicon passivation layers in silicon heterojunction solar cells
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Kinetic Monte Carlo simulation of transport in amorphous silicon passivation layers in silicon heterojunction solar cells

机译：硅异质结太阳能电池中非晶硅钝化层输运的动力学蒙特卡洛模拟

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Silicon heterojunction solar cell device structures use carrier-selective contacts to maximize collection of photogenerated carriers. The carrier-selective contact structure consists of doped hydrogenated amorphous silicon and intrinsic hydrogenated amorphous silicon [a-Si:H(i)]. In this structure, the a-Si:H(i) layer plays a crucial role as it passivates the heterointerface between the doped hydrogenated amorphous silicon and the crystalline silicon enabling the solar cell to achieve high device efficiencies. However, the a-Si:H(i) layer also creates a potential barrier to photogenerated carriers which obstructs them from getting collected. Previously, experimental studies in the literature have predicted that the photogenerated carriers cross the barrier by defect-assisted transport (hopping). Traditionally, theoretical models that are employed to study the electrical characteristics of silicon heterojunction solar cells do not provide any great insight into the transport of carriers via defects. In this paper, we present an in-house developed kinetic Monte Carlo that simulates the transport of photogenerated holes through the band tail defect states in the a-Si:H(i) layer. This is done primarily by defining transition rates associated with carrier-defect interactions. We conduct simulations to understand the impact of the properties (optical phonon energy, defect density, etc.) of the a-Si:H(i) layer on transport of photogenerated holes. Our simulations indicate that multi-phonon injection and hopping processes assist photogenerated holes to cross the a-Si:H(i) layer, which is in agreement with experimental findings.
机译：硅异质结太阳能电池器件结构使用载流子选择触点来最大化光生载流子的收集。载流子选择接触结构由掺杂的氢化非晶硅和本征氢化非晶硅[a-Si：H（i）]组成。在这种结构中，a-Si：H（i）层起着至关重要的作用，因为它钝化了掺杂的氢化非晶硅和晶体硅之间的异质界面，从而使太阳能电池能够实现高器件效率。但是，a-Si：H（i）层也对光生载流子产生了潜在的障碍，阻碍了它们的收集。以前，文献中的实验研究已经预言，光生载流子会通过缺陷辅助运输（跳跃）穿过屏障。传统上，用于研究硅异质结太阳能电池电特性的理论模型不能很好地了解载流子通过缺陷的传输。在本文中，我们提出了一种内部开发的动力学蒙特卡洛方法，该方法模拟了光生空穴通过a-Si：H（i）层中的带尾缺陷状态的传输。这主要是通过定义与载流子-缺陷相互作用相关的转变速率来完成的。我们进行模拟以了解a-Si：H（i）层的性质（光学声子能量，缺陷密度等）对光生空穴传输的影响。我们的模拟表明，多声子注入和跳跃过程有助于光生空穴穿过a-Si：H（i）层，这与实验结果相符。

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