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首页> 外文期刊>Journal of Computational Electronics >A particle swarm neural networks electrothermal modeling approach applied to GaN HEMTs
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A particle swarm neural networks electrothermal modeling approach applied to GaN HEMTs

机译:一种应用于GaN HEMT的粒子群神经网络电热建模方法

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摘要

This paper presents a simple approach to model the self-heating effect in GaN high electron mobility transistors (HEMTs) using a particle swarm neural network and also reports the extraction procedure of the model parameters. The main advantage of the developed method is its simplicity of construction and implementation in computer-aided-design tools. The developed modeling procedure is applied to a packaged GaN HEMT and validated by DC and AC small/large-signal simulations, which showed a very good agreement with the measurements.
机译:本文提出了一种使用粒子群神经网络对GaN高电子迁移率晶体管(HEMT)中的自热效应进行建模的简单方法,并报告了模型参数的提取过程。所开发方法的主要优点是其在计算机辅助设计工具中的构造和实现简单。将开发的建模程序应用于封装的GaN HEMT,并通过DC和AC小/大信号仿真进行了验证,这与测量结果非常吻合。

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