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首页> 外文期刊>Journal of Computational Electronics >Estimating various losses in c-Si solar cells subjected to partial shading: insights into J-V performance reduction
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Estimating various losses in c-Si solar cells subjected to partial shading: insights into J-V performance reduction

机译：估算部分遮蔽的c-Si太阳能电池的各种损耗：对降低J-V性能的见解

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摘要

This article reports the effect of partial shading (PS) on the electrical output of a solar cell using the two-diode model. The reduction in electrical performance parameters induced by various recombination losses has been explained for c-Si solar cells under the effect of PS. The PS mainly affects the short-circuit current density (J(SC)) and efficiency (eta) of the solar cells. J(SC) and eta decrease from 37.84 to 5.48 mA cm(-2) and from 18.31 to 2%, respectively. Among all the energy losses encountered for PS, spatial relaxation and recombination losses are the dominating factors responsible for the reduction in J(SC). PC1D and Griddler simulations have been performed to evaluate the effect of front surface and bulk recombination. The PC1D simulated external quantum efficiency is governed by the front and back surface recombination velocity and carrier life time of the charge carriers under PS. The power loss (P-e) of similar to 34% from the emitter region has been determined by resistance analysis in correlation with the recombination in the emitter region of the solar cells under PS.
机译：本文使用两二极管模型报告部分遮蔽（PS）对太阳能电池电输出的影响。已经解释了在PS的作用下c-Si太阳能电池由各种复合损耗引起的电性能参数的降低。 PS主要影响太阳能电池的短路电流密度（J（SC））和效率（η）。 J（SC）和eta分别从37.84降至5.48 mA cm（-2）和从18.31降至2％。在PS遇到的所有能量损失中，空间弛豫和重组损失是导致J（SC）降低的主要因素。已进行PC1D和Griddler仿真以评估前表面和本体复合的效果。 PC1D模拟的外部量子效率受PS下电荷载流子的前后复合速度和载流子寿命的支配。已经通过电阻分析与PS下太阳能电池的发射极区域中的重组相关联地确定了与发射极区域相似的34％的功率损耗（P-e）。

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