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首页> 外文学位 >Development of an Industrial Fabrication Process for Next Generation, Thinner and Larger Crystalline Silicon (c-Si) Wafer-Based Solar Cells.
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Development of an Industrial Fabrication Process for Next Generation, Thinner and Larger Crystalline Silicon (c-Si) Wafer-Based Solar Cells.

机译：开发用于下一代，更薄，更大晶体硅（c-Si）晶圆的太阳能电池的工业制造工艺。

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摘要

The world's solar cell production has grown rapidly and steadily with an annual average of 30% over the last two decades. Single and micro-crystalline silicon solar cells have been the major reason for this production increase. In 2009, silicon-based solar cells comprised almost 90% of worldwide photovoltaic module shipments.;Reducing consumption of silicon through the use of thin wafers promises to significantly reduce the cost for the photovoltaic (PV) industry. Tradeoffs in efficiency, breakage and yield have slowed the industry's natural migration to thinner and larger wafers. Today's optimized solar cell structure screen-prints aluminum to the back side of the silicon wafer to create a back surface field and silver to the front side for front contact metallization. Because silicon and aluminum have different thermal expansion coefficients, wafer bowing occurs during the high temperature firing process for thinner wafers. As manufacturers move to larger size wafers, a great increase in resistive loss is caused by the high resistivity of the screen-printed silver front contact. New materials and processes to enable thinner and larger wafer usage have been investigated.;This thesis study demonstrates a one step, spin-on dopant (SOD) diffusion process that integrates the use of Boron as the back surface field as opposed to the industrial fabrication process of silicon based solar cells. Building from the spin-on dopant diffusion process results, a multi-step metallization process using nickel silicide, nickel, and copper will be presented to solve the high resistive loss problem with the current industrial technology.
机译：在过去的二十年中，世界太阳能电池的生产迅速稳定地增长，年均增长30％。单晶硅和微晶硅太阳能电池一直是产量增加的主要原因。 2009年，硅基太阳能电池几乎占全球光伏模块出货量的90％。；通过使用薄晶圆减少硅的消耗有望显着降低光伏（PV）行业的成本。效率，破损和成品率之间的折衷减缓了该行业向更薄和更大晶圆的自然迁移的速度。如今，经过优化的太阳能电池结构将铝丝网印刷到硅晶片的背面以产生背面电场，并在正面银印刷以进行正面接触金属化。由于硅和铝具有不同的热膨胀系数，因此在较薄晶片的高温烧制过程中会发生晶片弯曲。随着制造商转向更大尺寸的晶圆，丝网印刷银正面触点的高电阻率导致电阻损耗的大幅增加。已经研究了能够使晶圆更薄和更大使用的新材料和工艺。；本论文研究证明了一步式旋涂掺杂剂（SOD）扩散工艺，该工艺集成了将硼用作背面场而不是工业制造的过程。硅太阳能电池的制造工艺。根据自旋掺杂剂扩散工艺的结果，将提出一种使用硅化镍，镍和铜的多步金属化工艺，以解决当前工业技术中的高电阻损耗问题。

著录项

  • 作者

    Nguyen, Anh V.;

  • 作者单位

    State University of New York at Albany.;

  • 授予单位 State University of New York at Albany.;
  • 学科 Alternative Energy.;Nanotechnology.;Nanoscience.
  • 学位 Ph.D.
  • 年度 2012
  • 页码 178 p.
  • 总页数 178
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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