Heteroepitaxial growth of alkali halide solid solution on GaAs(1 0 0)

M. Kiguchi; K. Saiki; A. Koma

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Heteroepitaxial growth of alkali halide solid solution on GaAs(1 0 0)

机译：GaAs（1 0 0）上卤化物碱溶液的异质外延生长

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Heteroepitaxial growth of alkali halide solid solution on GaAs(1 0 0) was studied using reflection high-energy electron diffraction, Auger electron spectroscopy, and electron energy loss spectroscopy. In past studies, a higher substrate temperature has been needed for the epitaxial growth of alkali halides on semiconductor substrates. We could grow a single-crystalline alkali halide thin film on a semiconductor substrate at room temperature, using a solid solution NaCl_0.94Br_0.06 whose lattice constant was equal to that of GaAs. We could modify the lattice constant of a solid solution by changing the mixing ratio, and controlling the conditions of epitaxial growth.

机译：利用反射高能电子衍射，俄歇电子能谱和电子能量损失能谱研究了卤化碱在GaAs（1 0 0）上的异质外延生长。在过去的研究中，在半导体衬底上外延生长碱金属卤化物需要更高的衬底温度。我们可以使用晶格常数等于GaAs的固溶NaCl_0.94Br_0.06在室温下在半导体衬底上生长单晶碱式卤化物薄膜。我们可以通过改变混合比并控制外延生长条件来改变固溶体的晶格常数。

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来源
《Journal of Crystal Growth》 |2002年第2002期|p.244-248|共5页
作者
M. Kiguchi; K. Saiki; A. Koma;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
A3. Molecular beam epitaxy; B1. Halides;

机译：A3。分子束外延;B1。卤化物;

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专利

1. A new approach to the evaluation of thermodynamic properties of nonideal solid solutions by the molecular dynamics method: A mixing model of alkali halide solid solution [J] . Kikuchi T. International Journal of Quantum Chemistry . 2000,第1期

机译：分子动力学方法评价非理想固溶体热力学性质的新方法：碱金属卤化物固溶体混合模型
2. Lower consolute boundaries of the nonionic surfactant C_8E_5 in aqueous alkali halide solutions: An approach to reproduce the effects of alkali halides on the cloud-point temperature [J] . Kristian Weckstrom, Anastassios C. Papageorgiou Journal of Colloid and Interface Science . 2007,第1期

机译：碱金属卤化物水溶液中非离子表面活性剂C_8E_5的较低固溶边界：重现碱金属卤化物对浊点温度影响的方法
3. A view and a review of the melting of alkali metal halide crystals - Part 2. Pattern of eutectics and solid solutions in binary common ion mixtures [J] . Galwey AK Journal of thermal analysis and calorimetry . 2005,第2期

机译：碱金属卤化物晶体熔融的观点和综述（第2部分）二元常见离子混合物中的共晶和固溶体模式
4. Heteroepitaxial growth of InSb directly on (001) GaAs without any buffer layer using growth rate ramping by MBE [C] . Mohammadkhani Mahdi, Mohaddes Kasaei Seyed Ahmad, Mirzakuchaki Sattar 2012 20th Iranian conference on electrical engineering . 2012

机译：使用MBE的生长速率斜率直接在（001）GaAs上异质外延生长InSb，而无需任何缓冲层
5. THE THERMAL EXPANSION OF CERTAIN ALKALI-HALIDES AND THEIR SOLID SOLUTIONS [D] . MCKINSTRY, HERBERT ALDEN -1

机译：某些碱金属盐的热膨胀及其固体溶液
6. Simple electrolyte solutions: Comparison of DRISM and molecular dynamics results for alkali halide solutions [O] . In Suk Joung, Tyler Luchko, David A. Case -1

机译：简单的电解质溶液：碱性卤化物溶液的DRISM和分子动力学结果的比较
7. Growth of textured films of BiSCCO from alkali halide solutions [O] . Katta Narasimha Reddy, U V Subba Rao, T S P L N Prasad, 1991

机译：来自碱卤化物解决方案的BISCCO纹理膜的生长
8. Electron localization and the nonmetal-metal transition in alkali-alkali halide solutions [R] . Akdeniz, Z. , Tosi, M. P. 1995

机译：碱金属卤化物溶液中的电子定位和非金属 - 金属转变

Heteroepitaxial growth of alkali halide solid solution on GaAs(1 0 0)

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