Enhanced optical performances of strain-compensated 1.3-μm GaInNAs/GaNAs/GaAs quantum-well structures

E.-M. Pavelescu; T. Jouhti; C.S. Peng

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Enhanced optical performances of strain-compensated 1.3-μm GaInNAs/GaNAs/GaAs quantum-well structures

机译：应变补偿的1.3μmGaInNAs / GaNAs / GaAs量子阱结构的增强的光学性能

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We report on luminescence properties of GaInNAs/GaNAs/GaAs quantum-well structures emitting light at the wavelength of 1.3 μm, grown by molecular beam epitaxy. The design of the structure consists of a strain-mediating GaInNAs layer, sandwiched between a highly compressive GaInAs quantum well and a strain-compensating GaNAs Layer. Insertion of the strain -mediating layer improves optical activity of the quantum well and shifts the spectrum to Longer wavelengths.

机译：我们报告了GaInNAs / GaNAs / GaAs量子阱结构的发光特性，该结构通过分子束外延生长在1.3μm的波长处发光。该结构的设计包括一个介导应变的GaInNAs层，该层夹在一个高度压缩的GaInAs量子阱和一个应变补偿的GaNAs层之间。应变调节层的插入改善了量子阱的光学活性并将光谱移动到更长的波长。

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来源
《Journal of Crystal Growth》 |2002年第2期|p.31-38|共8页
作者
E.-M. Pavelescu; T. Jouhti; C.S. Peng;
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作者单位

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
Photoluminescence; Molecular beam epitaxy; Semiconducting quaternary alloys;

机译：光致发光;分子束外延;半导体四元合金;

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专利

1. Enhanced optical and structural properties of strain-compensated 1.3-μm GaInNAs/GaNAs/GaAs quantum-well structures by insertion of strain-mediating layers [J] . E.-M. Pavelescu, C.S. Peng, T. Jouhti, Solid-State Electronics . 2003,第3期

机译：通过插入应变中介层增强了应变补偿的1.3μmGaInNAs / GaNAs / GaAs量子阱结构的光学和结构特性
2. Optimisation of growth temperature and post-growth annealing for GaInNAs/GaNAs/GaAs quantum-well structures emitting at 1.3 μm [J] . Y. Fedorenko, T. Jouhti, E.-M. Pavelescu, Thin Solid Films . 2003,第1a2期

机译：GaInNAs / GaNAs / GaAs量子阱结构以1.3μm发射的生长温度和生长后退火的优化
3. Annealing effects on optical and structural properties of 1.3-μm GaInNAs/ GaAs quantum-well samples capped with dielectric layers [J] . H. F. Liu, C. S. Peng, E.-M. Pavelescu, Applied Physics Letters . 2004,第4期

机译：退火对1.3μm覆盖介电层的GaInNAs / GaAs量子阱样品的光学和结构性质的影响
4. Photoluminescence study of strain-compensated GaInNAs/GaNAs/GaAs quantum-well structures grown by molecular-beam epitaxy [C] . E. -M. Pavelescu, T. Jouhti, M. Dumitrescu, International Semiconductor Conference . 2002

机译：分子束外延生长应变补偿增益/ GANAS / GAAS量子井结构的光致发光研究
5. Dielectric-enhanced quantum-well intermixing in lambda = 1.55 micron indium gallium arsenic phosphide/indium phosphide laser structures. [D] . Hazell, John F. 2002

机译：λ= 1.55微米铟磷化铟镓/磷化铟激光结构中的介电增强量子阱混合。
6. Effects of annealing on performances of 1.3-μm InAs-InGaAs-GaAs quantum dot electroabsorption modulators [O] . Shuh Ying Lee, Soon Fatt Yoon, Andrew CY Ngo, 2013

机译：退火对1.3μmInAs-InGaAs-GaAs量子点电吸收调制器性能的影响
7. Enhanced optical properties of the GaAsN/GaAs quantum-well structure by the insertion of InAs monolayers [O] . Gao, Q, Tan, HH, Jagadish, C, 2004

机译：通过插入InAs单层提高GaAsN / GaAs量子阱结构的光学性能

Enhanced optical performances of strain-compensated 1.3-μm GaInNAs/GaNAs/GaAs quantum-well structures

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