Effect of rapid thermal annealing on the structural characteristics of cubic GaN epilayer grown on GaAs (001) substrates by molecular beam epitaxy

H.F.Liu; H.Chen; M.Xu

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Effect of rapid thermal annealing on the structural characteristics of cubic GaN epilayer grown on GaAs (001) substrates by molecular beam epitaxy

机译：快速热退火对分子束外延生长在GaAs（001）衬底上的立方GaN外延层结构特性的影响

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Rapid thermal annealing (RTA) of the cubic GaN (c-GaN) film grown on GaAs (001) substrate by molecular beam epitaxy shows that the surface morphology is improved. The average root-mean-square (RMS) surface roughness measured by atomic force microscopy (AFM) decreased from 4.86 nm on the as-grown film to 3.57 nm after a 1000 deg.C annealing. There is no shift but Raman features show an increase in intensity and changes in the full-width at half- maximum (FWHM) observed before and after the annealing. High-resolution X-ray diffraction (HRXRD) is used in two-dimensional (2D) triple axis mapping mode to characterize the c-GaN epitaxial films before and after the annealing process.

机译：通过分子束外延在GaAs（001）衬底上生长的立方GaN（c-GaN）膜进行快速热退火（RTA）表明，表面形态得到了改善。通过原子力显微镜（AFM）测量的平均均方根（RMS）表面粗糙度从生长膜上的4.86 nm降低到1000℃退火后的3.57 nm。没有变化，但拉曼特征显示出强度的增加以及退火前后所观察到的半峰全宽（FWHM）的变化。高分辨率X射线衍射（HRXRD）用于二维（2D）三轴映射模式，以表征退火工艺前后的c-GaN外延膜。

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来源
《Journal of Crystal Growth》 |2001年第3期|p.503-506|共4页
作者
H.F.Liu; H.Chen; M.Xu;
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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
原文格式 PDF
正文语种 eng
中图分类晶体学;
关键词
RTA; GaN; MBE;

机译：RTA;氮化镓;MBE;

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Effect of rapid thermal annealing on the structural characteristics of cubic GaN epilayer grown on GaAs (001) substrates by molecular beam epitaxy

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